Etching method and plasma processing system
AssigneeTokyo Electron Limited
InventorsKae TAKAHASHI, Maju TOMURA, Yoshihide KIHARA, Noriyoshi ARIMA
Life of this patent
Estimating the term…
Abstract
An etching method is implementable with a plasma processing apparatus including a chamber. The method includes (a) providing, in the chamber, a substrate including an etching target film and a mask on the etching target film, and (b) etching the etching target film using plasma generated from a process gas including a hydrogen fluoride gas. The mask contains at least one metal selected from the group consisting of tungsten, molybdenum, ruthenium, titanium, indium, gallium, and zinc.
Claims21
An etching method in a chamber of a plasma processing apparatus, the method comprising:
- (a) providing, in the chamber, a substrate including an etching target film and a mask on the etching target film, the mask comprising at least one metal selected from the group consisting of tungsten, molybdenum, ruthenium, titanium, indium, gallium, and zinc;
- and
- (b) etching the etching target film using plasma generated from a process gas including a hydrogen fluoride gas.
An etching method in a chamber of a plasma processing apparatus, the method comprising:
- (a) providing, in the chamber, a substrate including an etching target film and a mask on the etching target film, the mask comprising at least one selected from the group consisting of tungsten, molybdenum, ruthenium, titanium, indium, gallium, and zinc;
- and
- (b) etching the etching target film using plasma including a hydrogen fluoride species.
A plasma processing system, comprising:
- a plasma processing apparatus including a chamber;
- and
- a controller, the controller being configured to perform control to cause operations including
- (a) providing, in the chamber, a substrate including an etching target film and a mask on the etching target film, the mask comprising at least one metal selected from the group consisting of tungsten, molybdenum, ruthenium, titanium, indium, gallium, and zinc, and
- (b) etching the etching target film using plasma generated from a process gas including a hydrogen fluoride gas.
Dependencies are inferred from the claim text.