Selective etching method and semiconductor structure manufactured using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Da HUANG, Chun-Fu KUO, Yi-Hsing YU, Li-Te LIN
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Abstract
A method for manufacturing a semiconductor structure includes forming a semiconductor portion which has an exposed region; forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric material; and performing an etching process such that the exposed region of the semiconductor portion is etched away to form a recess while a protection layer is formed to protect each of the fin sidewalls during the etching process. Other methods for manufacturing the semiconductor structure are also disclosed.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- forming a semiconductor portion which has an exposed region;
- forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric material;
- and
- performing an etching process such that the exposed region of the semiconductor portion is etched away to form a recess while a protection layer is formed to protect each of the fin sidewalls during the etching process.
A method for manufacturing a semiconductor structure, comprising:
- forming a patterned structure which includes
- a semiconductor substrate,
- a semiconductor fin disposed on the semiconductor substrate, and
- a dummy gate portion disposed on the semiconductor fin such that the semiconductor fin has two regions exposed from the dummy gate portion;
- forming two fin sidewalls which are disposed at two opposite sides of each of the exposed regions of the semiconductor fin, and which include a nitride-based material;
- and
- performing an etching process such that the exposed regions of the semiconductor fin are etched away while a protection layer is formed to protect each of the fin sidewalls during the etching process.
A method for manufacturing a semiconductor structure, comprising:
- forming a patterned structure which includes
- a semiconductor substrate,
- a semiconductor fin including a stack portion and a lower portion which is disposed between the semiconductor substrate and the stack portion, the stack portion including a plurality of sacrificial layers and a plurality of channel layers disposed to alternate with the sacrificial layers, and
- a dummy gate portion disposed on the semiconductor fin such that the semiconductor fin has two regions exposed from the dummy gate portion;
- forming two fin sidewalls which are disposed at two opposite sides of each of the exposed regions of the semiconductor fin, and which include a nitride-based material;
- and
- performing an etching process such that the exposed regions of the semiconductor fin are etched away to form recesses, respectively, while a protection layer is formed to protect each of the fin sidewalls during the etching process.
Dependencies are inferred from the claim text.