Patterning layer modification using directional radical ribbon beam
AssigneeApplied Materials, Inc.
InventorJohn Hautala
Life of this patent
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Abstract
Disclosed are approaches for forming semiconductor patterning features. One method may include providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a resist layer or a carbon-based layer. The method may further include removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.
Claims20
A method, comprising:
- providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a resist layer or a carbon-based layer;
- and
- removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.
A method of forming a semiconductor device, comprising:
- providing a plurality of openings through a patterning layer, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a photoresist or a carbon-based film;
- and
- removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.
A method of modifying openings of a semiconductor device, the method comprising:
- providing a plurality of openings through a patterning layer, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a photoresist or a carbon-based film;
- and
- removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall during an ashing process or an etching process, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.
Dependencies are inferred from the claim text.