Method for fabricating mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Hsun LIN, Hung-Yi TSAI, Hao-Ping CHENG, Ta-Cheng LIEN, Hsin-Chang LEE
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Abstract
A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.
Claims20
A method comprising:
- depositing a target layer over a dielectric substrate;
- forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout;
- determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout;
- and
- using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.
A method comprising:
- depositing a target layer over a dielectric substrate;
- performing a lithography process to form a patterned photoresist layer over the target layer;
- performing a first estimation operation to estimate an etch performance based on a plurality of initial dry etch control parameters;
- determining whether the estimated etch performance estimated in the first estimation operation is acceptable;
- in response to the determination determines that the estimated etch performance in the first estimation operation is not acceptable, adjusting the initial dry etch control parameters to generate adjusted dry etch control parameters;
- performing a second estimation operation to estimate an etch performance based on the adjusted dry etch control parameters;
- determining whether the estimated etch performance estimated in the second estimation operation is acceptable;
- and
- in response to the determination determines that the estimated etch performance in the second estimation operation is acceptable, etching the target layer through the patterned photoresist layer using a dry etcher set up with the adjusted dry etch control parameters.
A method comprising:
- forming a reflective multi-layer over a dielectric substrate;
- depositing a light absorption layer over the reflective multi-layer;
- forming a patterned photoresist layer over the light absorption layer;
- determining a plurality of initial dry etch control parameters, wherein determining the initial dry etch control parameters comprises choosing a gas type as one of the initial dry etch control parameters based on a material of the light absorption layer;
- estimating a critical dimension uniformity of an etch performance according to the initial dry etch control parameters;
- adjusting the initial dry etch control parameters according to the critical dimension uniformity of the etch performance to generate adjusted dry etch control parameters;
- and
- using a dry etcher set up with the adjusted dry etch control parameters, etching the light absorption layer through the patterned photoresist layer.
Dependencies are inferred from the claim text.