Substrate and manufacturing method therefor
AssigneeEnkris Semiconductor, Inc.
InventorsKai Cheng, Peng Xiang
Life of this patent
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Abstract
The present application provides a substrate and a manufacturing method therefor. The substrate includes a silicon substrate and a protective layer, the silicon substrate includes a middle part and an edge part, and a thickness of the middle part is greater than a thickness of the edge part. The middle part has a to-be-grown surface, and a crystal orientation of the to-be-grown surface is different from a crystal orientation of surface of the edge part. The protective layer covers the edge part and is configured to prevent defects in the edge part from extending to the middle part during high-temperature processing.
Claims15
A method of manufacturing a substrate, comprising:
- providing a silicon substrate comprising a middle part and edge part, wherein a thickness of the middle part is greater than a thickness of the edge part, the middle part has a to-be-grown surface, and a crystal orientation of the to-be-grown surface is different from a crystal orientation of surfaces of the edge part;
- and
- forming a covering layer on the edge part, wherein the covering layer is a protective layer.
A substrate, comprising:
- a silicon substrate comprising a middle part and an edge part, wherein a thickness of the middle part is greater than a thickness of the edge part;
- the middle part has a to-be-grown surface, and a crystal orientation of the to-be-grown surface is different from a crystal orientation of surface of the edge part;
- a protective layer covering the edge part and configured to prevent defects in the edge part from extending to the middle part during high-temperature processing.
Dependencies are inferred from the claim text.