Method for manufacturing metal oxynitride film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKazuki TANEMURA, Shota SAMBONSUGE, Naoki OKUNO
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Abstract
A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.
Claims15
A metal oxynitride film,
- wherein the metal oxynitride film is provided on a single crystal substrate,
- wherein the metal oxynitride film comprises zinc, indium, and gallium, and
- wherein the metal oxynitride film is an in-plane oriented film.
A metal oxynitride film,
- wherein the metal oxynitride film is provided on a single crystal substrate,
- wherein the metal oxynitride film comprises zinc, indium, and gallium, and
- wherein the metal oxynitride film is a c-axis epitaxial film.
A display device comprising:
- a light-emitting element comprising a metal oxynitride film,
- wherein the metal oxynitride film comprises zinc, indium, and gallium,
- wherein the metal oxynitride film is an in-plane oriented film, and
- wherein a crystal structure of the metal oxynitride film is a wurtzite structure.
Dependencies are inferred from the claim text.