Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Yoshihiro KOMATSU, Toshikazu OHNO, Yuichi YANAGISAWA, Shinya SASAGAWA
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Abstract
A semiconductor device in which variation in electrical characteristics is small is provided. A first insulator is deposited, a metal oxide is device over the first insulator, a second insulator is device over the metal oxide, an oxide film is device over the second insulator, and heat treatment is performed, whereby hydrogen in the first insulator, the second insulator, and the oxide is transferred and absorbed into the metal oxide. The metal oxide is formed by an ALD method.
Claims13
A method for manufacturing a semiconductor device comprising:
- depositing a first insulating film;
- depositing a metal oxide film over the first insulating film by an ALD method;
- depositing a second insulating film over the metal oxide film;
- depositing an oxide film over the second insulating film;
- and
- performing heat treatment, so that hydrogen atoms in the first insulating film, the second insulating film, and the oxide film are transferred and absorbed into the metal oxide film.
Dependencies are inferred from the claim text.