Plasma processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsTakashi CHIBA, Jun SATO, Takeshi KOBAYASHI
Life of this patent
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Abstract
With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.
Claims7
A plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method comprising:
- (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container;
- and
- (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a),
- wherein (b) includes supplying a pulse wave of the high-frequency power to the antenna, the pulse wave repeating on and off.
A substrate processing apparatus that deposits a nitride film on a substrate by using plasma, the substrate processing apparatus comprising:
- a processing container that accommodates the substrate;
- a processing gas nozzle configured to supply a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside the processing container;
- a plasma source configured to generate the plasma in the plasma processing space with an antenna being disposed on a quartz portion exposed to the plasma processing space;
- and
- a high-frequency power supply configured to supply high-frequency power to the antenna at a time of supplying the plasma processing gas from the processing gas nozzle to the plasma processing space,
- wherein the high-frequency power supply supplies a pulse wave of the high-frequency power to the antenna, the pulse wave repeating on and off.
Dependencies are inferred from the claim text.