Method of manufacturing semiconductor device with programmable feature

Abstract

The present application provides a method of fabricating a semiconductor device. The method includes steps of forming a first insulative film on a substrate; forming a first electrode on the first insulative film; implanting dopants in the substrate to form a plurality of first impurity regions on either side of the first electrode; depositing a capping layer to cover the first electrode; forming a second insulative film on portions of the substrate exposed through the first electrode and the capping layer; forming a second electrode disposed over the capping layer and portions of the second insulative film; removing portions of the second insulative film on either side of the second electrode; and implanting dopants in portions of the substrate exposed by the second insulative film to form a plurality of second impurity regions.

Dependencies are inferred from the claim text.