Open block boundary group programming for non-volatile memory

A method for programming memory cells in a three-dimensional memory structure, wherein the memory cells are arranged as blocks having NAND strings and word lines associated with the NAND strings, the method comprising:

• determining whether programming user data into respective groups of memory cells connected to the word lines in a selected block will result in an open block after programming the user data;
• programming a first unit of the user data into a first group of memory cells connected to a first word line with a first set of program parameters responsive to a determination that programming the first group of memory cells will not result in an open block;
• and
• programming a second unit of the user data into a second group of memory cells connected to a second word line with a second set of program parameters responsive to a determination that programming the second group of memory cells will result in an open block.

A non-volatile storage system comprising

• a three-dimensional memory structure comprising blocks comprising vertically oriented NAND strings having memory cells, each block comprising a plurality of word lines;
• and
• one or more control circuits in communication with the three-dimensional memory structure, wherein the one or more control circuits are configured to:
• receive data from a host;
• determine whether the data is sufficient to program an entire block of memory cells, wherein the block will be an open block if the data is insufficient to program the entire block;
• and
• responsive to a determination that the block will be an open block, program the data into consecutive word lines in the open block including:
• program units of the data into memory cells connected to non-boundary word lines in the open block with a first set of program parameters;
• and
• program one or more units of the data into memory cells connected to a boundary word line in the open block with a second set of program parameters, wherein the boundary word line is adjacent to a word line having unprogrammed memory cells after programming the data from the host.