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US 2023/0401885 A1Published application
Optical sensor and methods of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYou-Cheng JHANG, Han-Zong PAN, Wei-Ding WU, Jiu-Chun WENG, Hsin-Yu CHEN, Cheng-San CHOU, Chin-Min LIN
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Abstract
Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
Claims20
A sensing apparatus, comprising:
- an image sensor;
- a collimator above the image sensor, wherein the collimator includes an array of apertures;
- an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures, wherein the optical filtering layer extends continuously directly above the collimator and has an opening outside of the collimator;
- and
- a conductive feature coupled to the image sensor, wherein the conductive feature extends through the opening.
2 more elements
A device, comprising:
- a touch display panel;
- a light conditioning layer under the touch display panel, wherein the light conditioning layer comprises a collimator, an infrared light filter above the collimator, and a passive oxide layer below the collimator;
- and
- an image sensing layer under the light conditioning layer, the image sensing layer is configured to sense light emitted from the touch display panel;
- a conductive feature coupled to the image sensor, wherein the conductive feature extends through the opening.
2 more elements
A method for forming a sensing apparatus, comprising:
- forming a semiconductor layer above a first substrate of a first wafer;
- etching the semiconductor layer to form a plurality of apertures;
- providing a second substrate of a second wafer, the second substrate including at least one image sensor;
- forming a buried oxide layer on the first substrate of the first wafer before the bonding, wherein the plurality of apertures is formed on the buried oxide layer;
- and
- forming a conductive feature coupled to the image sensor, wherein the conductive feature extends through the opening.
3 more elements
Dependencies are inferred from the claim text.