Semiconductor measurement apparatus

A semiconductor measurement apparatus, comprising:

• an image sensor configured to receive light passing through a plurality of polarization elements and reflected by a sample, and to output multi-interference images representing interference patterns of polarization components of light;
• an optical unit disposed on a path through which the image sensor receives light and including an objective lens disposed above the sample;
• and
• a control unit configured to obtain, by processing the multi-interference images, a degree of polarization determined from the polarization components at each of a plurality of azimuths defined on a plane perpendicular to a path of light incident to the image sensor,
• wherein the control unit is configured to determine a selected critical dimension to be measured from a structure included in the sample based on the degree of polarization.

A semiconductor measurement apparatus, comprising:

• an illumination system configured to irradiate light to a sample while changing a wavelength band;
• an optical system disposed on a path through which light is reflected by the sample and incident to an image sensor, and including a plurality of beam displacers configured to decompose light into a plurality of polarization components;
• and
• a controller configured to determine elements of a Mueller matrix representing the plurality of polarization components based on a multi-interference image generated by the image sensor receiving the plurality of polarization components,
• wherein the controller is configured to select at least one element from among the elements, and to determine a critical dimension of a structure included in a region of the sample to which light is irradiated using spectral data corresponding to distribution of the at least one element according to the wavelength band.