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US 2023/0399767 A1Published application
Systems and methods for pulsed beam deposition of epitaxial crystal layers
OwnerPaul COLOMBOinventor
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OwnerPaul COLOMBOinventor
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The present invention provides a Pulsed Beam Deposition (PBD) architecture that aims effusion cells parallel to the axis of rotation and off-center of an annular-shaped substrate holder. This configuration results in pulsed, single elemental substrate exposure and no co-deposition when multiple sources are open. Migration-enhanced epitaxy (MEE) is achieved automatically with no sequential shuttering. PBD with built-in MEE solves both shutter fatigue and growth-rate limitations of traditional MEE. Some embodiments provide a PBD apparatus comprising a plurality of elemental effusion cells positioned to deposit elemental materials onto a revolving substrate held by a rotatable substrate holder, wherein the rotatable substrate holder and the plurality of elemental effusion cells are configured to limit direct exposure at any point on the substrate to a maximum of one elemental effusion cell at a time. Methods of using the PBD apparatus, and epitaxial wafers that may be fabricated with the PBD apparatus, are disclosed.
A pulsed-beam-deposition apparatus, said pulsed-beam-deposition apparatus comprising a plurality of elemental effusion cells positioned to deposit elemental materials onto a revolving substrate held by a substrate holder, wherein said revolving substrate and said plurality of elemental effusion cells are configured, without the use of sequential shuttering, to limit direct exposure of any point on said revolving substrate to a maximum of one elemental effusion cell at a time.
A method of pulsed beam deposition, said method comprising:
A product produced by a process comprising the steps of:
Dependencies are inferred from the claim text.