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US 2023/0399754 A1Published application
Cleaning composition with molybdenum etching inhibitor
AssigneeEntegris, Inc.
InventorsDaniela White, Michael L. White, YoungMin Kim, Akshay Rajopadhye, Atanu K. Das
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.
Claims37
A removal composition for removing post-CMP residue from the surface of a microelectronic device, the removal composition comprising an aqueous base composition having a pH of greater than 10 comprising water and at least one of:
- an organic additive, a cleaning additive, a water-miscible organic solvent, and a pH adjustor,
- wherein the removal composition further comprises at least one molybdenum etching inhibitor selected from the group consisting of:
- a) a quaternary ammonium compound of Formula A:
- Ar—R—N+(R1)(R2)(R3)X− (A),
- wherein Ar is a substituted or unsubstituted aryl group and X− is an hydroxy ion, a halide ion, a sulfate ion, or a methanesulfonate ion and wherein:
- 1) R is a methylene or ethylene group;
- R1, R2, and R3 are straight chain or branched alkyl groups;
- and at least one of R1, R2, and R3 is a C4-C20 alkyl group,
- 2) R is a C3-C20 alkylene group and R1, R2, and R3 are a methyl or ethyl group, or
- 3) R is a C1-C20 alkylene group;
- R1, R2, and R3 are straight chain or branched alkyl groups;
- and at least one of R1, R2, and R3 comprises a glycol group,
- b) a quaternary ammonium compound of Formula B:
- (R4)(R5)(R6)(R7)N+X− (B),
- wherein R4, R5, R6, and R7 are straight or branched alkyl groups and at least two of R4, R5, R6, and R7 are a C6-C20 alkyl group,
- c) a pyridinium compound of Formula C or a bipyridinium compound of Formula D:
- R9—(C5H5N+)—R8X− (C),
- R8—(+NC5H5)—(C5H5N+)—R8X− (D)
- wherein R8 is an alkyl group and R9 is a substituted or unsubstituted, straight chain or branched alkyl or alkylene group, and
- d) a radical scavenger selected from the group consisting of an hydroxybenzene, a pyrazolinone, a compound having an aminoxyl radical, a gluconolactone, a tertiary alkyl alcohol, and ascorbic acid, and wherein the removal composition removes less molybdenum from a surface of a microelectronic device comprising molybdenum than the aqueous base composition.
17 more elements
A method of removing post-CMP residues from a surface of a microelectronic device comprising a molybdenum material, the method comprising:
- i) contacting the surface of the microelectronic device with a removal composition comprising an aqueous base composition having a pH of greater than 10 comprising water and at least one of:
- an organic additive, a cleaning additive, a water-miscible organic solvent, and a pH adjustor,
- wherein the removal composition further comprises at least one molybdenum etching inhibitor selected from the group consisting of:
- a) a quaternary ammonium compound of Formula A:
- Ar—R—N+(R1)(R2)(R3)X− (A),
- wherein Ar is a substituted or unsubstituted aryl group and X− is an hydroxy ion, a halide ion, a sulfate ion, or a methanesulfonate ion and wherein:
- 1) R is a methylene or ethylene group;
- R1, R2, and R3 are straight chain or branched alkyl groups;
- and at least one of R1, R2, and R3 is a C4-C20 alkyl group,
- 2) R is a C3-C20 alkylene group and R1, R2, and R3 are a methyl or ethyl group, or
- 3) R is a C1-C20 alkylene group;
- R1, R2, and R3 are straight chain or branched alkyl groups;
- and at least one of R1, R2, and R3 comprises a glycol group,
- b) a quaternary ammonium compound of Formula B:
- (R4)(R5)(R6)(R7)N+X− (B),
- wherein R4, R5, R6, and R7 are straight or branched alkyl groups and at least two of R4, R5, R6, and R7 are a C6-C20 alkyl group,
- c) a pyridinium compound of Formula C or a bipyridinium compound of Formula D:
- R9—(C5H5N+)—R8X− (C),
- R8—(+NC5H5)—(C5H5N+)—R8X− (D)
- wherein R8 is an alkyl group and R9 is a substituted or unsubstituted, straight chain or branched alkyl or alkylene group, and
- d) a radical scavenger selected from the group consisting of an hydroxybenzene, a pyrazolinone, a compound having an aminoxyl radical, a gluconolactone, a tertiary alkyl alcohol, and ascorbic acid;
- and
- ii) at least partially removing the post-CMP residue from the surface of the microelectronic device,
- wherein the removal composition removes less of the molybdenum material from the surface of the microelectronic device than the aqueous base composition.
21 more elements
A method of inhibiting the etching of a molybdenum material from a surface of a microelectronic device, the method comprising:
- i) providing an aqueous base composition having a pH of greater than 10 comprising water and at least one of:
- an organic additive, a cleaning additive, a water-miscible organic solvent, and a pH adjustor,
- ii) combining the aqueous base composition and at least one molybdenum etching inhibitor to form a removal composition, the molybdenum etching inhibitor selected from the group consisting of:
- a) a quaternary ammonium compound of Formula A:
- Ar—R—N+(R1)(R2)(R3)X− (A),
- wherein Ar is a substituted or unsubstituted aryl group and X− is an hydroxy ion, a halide ion, a sulfate ion, or a methanesulfonate ion and wherein:
- 1) R is a methylene or ethylene group;
- R1, R2, and R3 are straight chain or branched alkyl groups;
- and at least one of R1, R2, and R3 is a C4-C20 alkyl group,
- 2) R is a C3-C20 alkylene group and R1, R2, and R3 are a methyl or ethyl group, or
- 3) R is a C1-C20 alkylene group;
- R1, R2, and R3 are straight chain or branched alkyl groups;
- and at least one of R1, R2, and R3 comprises a glycol group,
- b) a quaternary ammonium compound of Formula B:
- (R4)(R5)(R6)(R7)N+X− (B),
- wherein R4, R5, R6, and R7 are straight or branched alkyl groups and at least two of R4, R5, R6, and R7 are a C6-C20 alkyl group,
- c) a pyridinium compound of Formula C or a bipyridinium compound of Formula D:
- R9—(C5H5N+)—R8X− (C),
- R8—(+NC5H5)—(C5H5N+)—R8X− (D)
- wherein R8 is an alkyl group and R9 is a substituted or unsubstituted, straight chain or branched alkyl or alkylene group, and
- d) a radical scavenger selected from the group consisting of an hydroxybenzene, a pyrazolinone, a compound having an aminoxyl radical, a gluconolactone, a tertiary alkyl alcohol, and ascorbic acid, and
- iii) contacting the surface of a microelectronic device comprising a molybdenum material with the removal composition, wherein the removal composition removes less molybdenum from the surface of the microelectronic device than the aqueous base composition.
19 more elements
Dependencies are inferred from the claim text.