Film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsYoshihiro KATO, Junya SUZUKI, Toshio HASEGAWA, Kouji SHIMOMURA
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Abstract
A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).
Claims20
A film forming method of embedding a film in a recess formed in a surface of a substrate, the method comprising:
- a first processing comprising:
- (a) adsorbing a raw material gas into the recess;
- (b) forming the film by reacting a first reaction gas with the raw material gas;
- and
- (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the plasma generation gas into the recess to shrink the film,
- wherein a plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).
A film forming apparatus comprising:
- a processing container configured to accommodate a substrate having a recess formed in a surface thereof;
- a gas supplier configured to supply a raw material gas, a reaction gas, and a plasma generation gas into the processing container;
- an RF power supplier configured to generate plasma;
- and
- a controller,
- wherein the plasma generation gas includes a hydrogen gas and a noble gas, and
- wherein the controller is configured to control the gas supplier and the RF power supplier so as to execute:
- (a) adsorbing the raw material gas into the recess;
- (b) forming a film by reacting the reaction gas with the raw material gas;
- and
- (c) activating the plasma generation gas by plasma and supplying the plasma generation gas into the recess to shrink the film, and
- wherein the controller is configured to control the gas supplier and the RF power supplier so that a plurality of cycles each including (a) and (b) are executed and at least a part of the plurality of cycles includes (c).
Dependencies are inferred from the claim text.