Chemical mechanical planarization slurry and method of polishing a substrate
AssigneeSaint-Gobain Ceramics & Plastics, Inc.
InventorsRenjie Zhou, Stephen Bottiglieri, Lin Fu, Chun-Lung Kuan
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Abstract
A chemical mechanical polishing (CMP) slurry can comprise a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles can have a body including a core comprising zirconia and a shell overlying at least a portion of the core, wherein the shell comprises silica; an oxidizing agent; and a carrier. The CMP slurry can comprise at least one of a Hydrogen Peroxide Stability % Reduction of not greater than 50%; and a high copper material removal rate.
Claims20
A chemical mechanical planarization (CMP) slurry comprising:
- a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles have a body including a core comprising zirconia and a shell overlying at least a portion of the core, wherein the shell comprises silica;
- an oxidizing agent;
- and
- a carrier,
- wherein the CMP slurry comprises at least one of:
- a Hydrogen Peroxide Stability % Reduction of not greater than 50%;
- a SiO2 material removal rate of at least 100 Å/min;
- a Cu material removal rate of at least 1500 Å/min;
- a TaN material removal rate of at least 100 Å/min;
- or
- a ST Material Removal Rate Percent Difference of not greater than 300%.
A method of polishing a substrate comprising:
- providing a substrate and a CMP slurry;
- and
- polishing the substrate with the CMP slurry using a polishing pad,
- wherein the CMP slurry comprises a plurality of particles distributed in a carrier, an oxidizing agent, and a carrier, wherein at least a portion of the particles of the plurality of particles have a body including a core comprising zirconia and a shell overlying at least a portion of the core, the shell comprising silica.
Dependencies are inferred from the claim text.