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US 2023/0399229 A1Published application
Ferroelectric thin film
AssigneesKorea Advanced Instituteof Science and Technology, Research & Business Foundation Sungkyunkwan University
InventorsHeejun YANG, Eunji HWANG, Yonas Assefa ESHETE
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Abstract
Provided is a thin film including Mo1-xWxTe2 stacked in a plurality of layers. The thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.
Claims20
A thin film comprising:
- Mo1-xWxTe2 stacked in a plurality of layers,
- wherein the thin film has a thickness of about 1 nm to about 100 nm in a stacking direction,
- has a symmetric lattice structure at a temperature higher than a threshold temperature, and
- has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.
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A thin film comprising:
- Mo1-xWxTe2 stacked in a plurality of layers,
- wherein the thin film has a thickness of about 1 nm to about 100 nm in a stacking direction,
- has ferroelectricity at a temperature equal to or lower than a threshold temperature, and
- has a degree of polarization which increases as the temperature equal to or lower than the threshold temperature decreases when x is constant.
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Dependencies are inferred from the claim text.