Micro-electromechanical systems (mems) device with outgas layer

A method for forming an integrated chip, the method comprising:

• etching a capping layer with a first etching process to form a first recess in the capping layer, wherein the first recess is delimited by a first lower surface of the capping layer and a first pair of sidewalls of the capping layer;
• depositing an outgas layer on the first lower surface of the capping layer;
• forming a masking layer on the outgas layer and directly over the first lower surface of the capping layer;
• etching the outgas layer with a second etching process and with the masking layer in place to remove the outgas layer from a portion of the capping layer, wherein the outgas layer remains on the first lower surface of the capping layer after the second etching process;
• and
• etching the capping layer with a third etching process to form a second recess in the capping layer laterally spaced apart from the first recess by the capping layer, wherein the second recess is delimited by a second lower surface of the capping layer and a second pair of sidewalls of the capping layer.

A method for forming an integrated chip, the method comprising:

• forming a first masking layer over a capping layer;
• etching the capping layer with a first etching process and with the first masking layer in place to form a pair of first recesses in the capping layer and a first capping layer protrusion disposed between the pair of first recesses, wherein the pair of first recesses are delimited by a pair of first lower surfaces of the capping layer;
• depositing an outgas layer comprising a dielectric on the pair of first lower surfaces of the capping layer;
• forming a second masking layer on the outgas layer, the second masking layer having a pair of second masking layer segments respectively disposed directly over the pair of first lower surfaces of the capping layer;
• etching the outgas layer with a second etching process and with the second masking layer in place to remove the outgas layer from a portion the capping layer, wherein the outgas layer remains on the pair of first lower surfaces of the capping layer after the second etching process;
• etching the capping layer with a third etching process to form a second recess in the capping layer, the second recess laterally spaced apart from the pair of first recesses by the capping layer;
• bonding the capping layer to a micro-electromechanical system (MEMS) layer comprising a first moveable mass and a second moveable mass laterally spaced apart from the first moveable mass, wherein after the bonding, the pair of first recesses and the outgas layer delimit, in part, a first cavity in which the first moveable mass is arranged and the second recess delimits, in part, a second cavity in which the second moveable mass is arranged;
• and
• heating the outgas layer to release an outgas species into the first cavity from the outgas layer.