Back to results
US 2023/0395591 A1Published application
Vertically stacked diode-trigger silicon controlled rectifier
AssigneeGlobalFoundries U.S. Inc.
InventorsAnindya NATH, Souvick MITRA
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked diode-trigger silicon controlled rectifiers and methods of manufacture. The structure includes: a silicon controlled rectifier in a trap rich region of a semiconductor substrate; and at least one diode built in polysilicon (gate material) and isolated by a gate-dielectric.
Claims20
A structure comprising:
- a silicon controlled rectifier on a trap rich region of a semiconductor substrate;
- and
- at least one diode over the trap rich region of the semiconductor substrate.
A structure comprising:
- a silicon controlled rectifier on a trap rich region of a silicon substrate;
- and
- at least one diode vertically integrated with the silicon controlled rectifier, the at least one diode includes a P+ region and N+ region in polysilicon and isolated from an underlying semiconductor substrate by a gate dielectric material.
A method comprising:
- forming a silicon controlled rectifier on a trap rich region of a semiconductor substrate;
- and
- forming at least one diode over the trap rich region of the semiconductor substrate.
Dependencies are inferred from the claim text.