Combined epitaxial growth system having multiple reaction chambers, operation method, device, and manufactured chip and application thereof

Abstract

The present disclosure provides a combined epitaxial growth system having multiple reaction chambers, an operation method, a device, and a manufactured chip and an application thereof. With a special metal-organic chemical vapor deposition (MOCVD) machine, a group III-V compound epi-wafer and a group II-VI compound epi-wafer are sequentially grown on a substrate. A time interval a at which multiple group III-V compound reaction chambers are sequentially started is the same as growth time y of the group II-VI compound epi-wafer. With the multi-chamber and stepwise manner, not only are a group III-V compound and a group II-VI compound deposited in the reaction chambers more effectively, but the time division multiplexing (TDM), effective integration of the stepwise process, and capacity matching are also implemented. The present disclosure further provides a combined epitaxial growth device having multiple reaction chambers, including a first growth device, a feeding device and a second growth device.

Dependencies are inferred from the claim text.