Multilayer structure, capacitor structure and electronic device

A capacitor structure, comprising:

• a first conductive layer;
• a second conductive layer;
• and
• an intermediate structure disposed between the first conductive layer and the second conductive layer, and including:
• a first dielectric layer;
• a second dielectric layer;
• and
• an intermediate dielectric layer disposed between the first dielectric layer and the second dielectric layer, wherein a bandgap of the intermediate dielectric layer is greater than 4.2 eV.

An electronic device, comprising:

• a substrate defining a trench;
• a capacitor structure disposed in the trench, and including a high-k dielectric layer, wherein a material of the high-k dielectric layer is represented by a formula of AxB1−xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0;
• a pad disposed above the substrate and electrically connected to the capacitor structure;
• and
• a conductive through via extending through the substrate and electrically connected to the pad.