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US 2023/0386759 A1Published application
Methods of vapor deposition of metal halides
AssigneesPresident and Fellows of Harvard College, Trustees of Tufts College
InventorsEliza Kate SPEAR, Luke M. DAVIS, Roy G. GORDON
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Abstract
This disclosure presents methods for vapor deposition of metal halides involving exposure of substrates to vapors of organometallic copper complexes with halosilane vapors. The methods described herein are advantageous for the production of transparent hole conducting layers, e.g., for perovskite solar cells.
Claims53
A method of producing a layer of a copper(I) halide, comprising:
- a) providing a substrate;
- and
- b) exposing the substrate to a vapor of halosilane and a vapor of a copper complex,
- wherein the copper complex and halosilane react to produce a layer of copper(I) halide on the substrate.
1 more element
A solar cell comprising;
- a) an electron injection layer;
- c) an electron collection layer;
- a) a perovskite absorbing layer disposed between the electron injection layer and electron collection layer;
- b) an n-type electron transport layer disposed between the electron collection layer and the perovskite absorbing layer and the electron collecting layer;
- and
- e) a p-type hole transport layer disposed between the perovskite absorbing layer;
- wherein p-type hole transport layer comprises a copper halide;
- wherein the perovskite absorbing layer and the p-type hole transport layer are in physical contact.
5 more elements
A composition comprising:
- a) a substrate;
- and
- b) a copper halide layer in physical contact with the substrate;
- wherein the substrate material physically or chemically degrades at temperatures between 35° C. and 200° C. and/or is chemically reactive to hydrogen halides and/or copper complexes at or above room temperature.
1 more element
Dependencies are inferred from the claim text.