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US 2023/0377828 A1Published application
Electron source, plasma source and switch device
AssigneesKabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions Corporation
InventorsHisao MIYAZAKI, Hisashi YOSHIDA, Shigeya KIMURA
Life of this patent
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Abstract
According to one embodiment, an electron source includes a base body and a first cathode layer. The first cathode layer includes a first diamond layer including a plurality of first polycrystalline diamonds, and a first member including a first element. At least a part of the first diamond layer is located between the base body and the first member. The first element includes at least one selected from the group consisting of Pd, Ni, Co, W, Mo, Ir and Ru.
Claims19
An electron source, comprising:
- a base body;
- and
- a first cathode layer,
- the first cathode layer including
- a first diamond layer including a plurality of first polycrystalline diamonds, and
- a first member including a first element,
- at least a part of the first diamond layer being located between the base body and the first member, and
- the first element including at least one selected from the group consisting of Pd, Ni, Co, W, Mo, Ir and Ru.
5 more elements
A plasma source, comprising:
- a container configured to store gas;
- an electron source being provided in the container, the electron source including a base body and a first cathode layer supported by the base body, the first cathode layer including a plurality of first polycrystalline diamonds;
- an anode member provided in the container;
- and
- a first member provided in the container, the first member including a first element including at least one selected from the group consisting of Pd, Ni, Co, W, Mo, Ir and Ru.
2 more elements
Dependencies are inferred from the claim text.