Method and a system for characterising structures etched in a substrate
AssigneeUnity Semiconductor Corporation
InventorWolfgang Alexander IFF
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Abstract
A method for characterising structures etched in a substrate, such as a wafer is disclosed. The method includes, for at least one structure, at least one interferometric measurement step, carried out with a low-coherence interferometer positioned on the top side of the substrate, for measuring with a measurement beam, at least one depth data relating to a depth of said HAR structure, wherein the method also includes a first adjusting step for adjusting a diameter, at the top surface, of the measurement beam according to at least one top-CD data relating to a width of said HAR structure. The invention further relates to a system implementing such a method.
Claims15
A method for characterising structures etched in a substrate, such as a wafer, said method comprising, for at least one structure:
- at least one interferometric measurement step, carried out with a low-coherence interferometer positioned on the top side of said substrate, for measuring with a measurement beam positioned on the structure, at least one depth data relating to a depth of said structure;
- wherein said method also comprising a first adjusting step for adjusting a diameter, at said top surface, of the measurement beam according to at least one top-CD data relating to a width of said structure.
A system for characterising structures etched in a substrate, such as a wafer, said system comprising:
- a low-coherence interferometer, arranged on the top side of said substrate, for measuring with a measurement beam positioned on the structure at least one depth data relating to a depth of said structure;
- and
- an adjustment unit for adjusting a diameter, at said top surface, of the measurement beam according to at least one top-CD data relating to a width of said HAR structure.
Dependencies are inferred from the claim text.