Dummy Patterns in Redundant Region of Double Seal Ring
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShan-Yu Huang, Hsiao-Wen Chung, Yi-Lun Chen, Huang-Sheng Lin
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Abstract
A semiconductor structure includes first and second inner seal rings each having a first section and a second section substantially perpendicular to the first section. The semiconductor structure further includes an outer seal ring. The outer seal ring has a third section, and a fourth section, and a fifth section. The semiconductor structure further includes dummy patterns substantially uniformly distributed in each of regions between the first inner seal ring and the outer seal ring and between the second inner seal ring and the outer seal ring.
Claims20
A semiconductor structure, comprising:
- first and second inner seal rings each having a first section and a second section substantially perpendicular to the first section;
- an outer seal ring, the outer seal ring having a third section, and a fourth section, and a fifth section, wherein the fourth and the fifth sections are substantially perpendicular to the third section, wherein the third section is substantially parallel to the first section of the first inner seal ring and the first section of the second inner seal ring, and the fourth section is substantially parallel to the second section of the first inner seal ring, and the fifth section is substantially parallel to the second section of the second inner seal ring;
- and
- dummy patterns substantially uniformly distributed in each of regions between the first section of the first inner seal ring and the third section, between the first section of the second inner seal ring and the third section, between the second section of the first inner seal ring and the fourth section, and between the second section of the second inner seal ring and the fifth section.
A semiconductor structure, comprising:
- two circuit regions;
- two inner seal rings, each of the two inner seal rings surrounding one of the two circuit regions;
- an outer seal ring surrounding the two inner seal rings;
- and
- dummy patterns substantially uniformly distributed in regions outside the two inner seal rings and inside the outer seal ring.
A semiconductor structure, comprising:
- two circuit regions;
- two inner seal rings, each of the two inner seal rings substantially surrounding one of the two circuit regions, wherein the two inner seal rings have openings;
- interconnects going through the openings and connecting the two circuit regions;
- an outer seal ring surrounding the two inner seal rings, wherein each of the inner seal rings and the outer seal ring has a substantially rectangular periphery with four interior corner seal ring structures;
- and
- dummy patterns substantially uniformly distributed in regions outside the two inner seal rings and inside the outer seal ring.
Dependencies are inferred from the claim text.