US 2023/0366123 A1 · CONTINUOUS INGOT GROWTH APPARATUS AND CONTROL METHOD THEREOF

Abstract

Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible. Since the solid silicon material such as polysilicon is supplied to the main crucible in a state in which the solid silicon material is completely melted outside the main crucible in which the ingot is grown, there is no need to form a partition in the main crucible, and thus the size of the main crucible may be reduced to reduce the manufacturing costs of the apparatus. In addition, since the main crucible is formed as one region, there is an effect of improving the ease of temperature control in the main crucible.

Claims29

Dependent claims

A continuous ingot growing apparatus comprising:

a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot;
a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon;
a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material;
and
a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible.

2 more elements

A method of controlling an ingot growing apparatus including a main crucible, a preliminary crucible, and a quantitative supply unit which supplies a solid silicon material to the preliminary crucible, the method comprising:

a measurement operation in which an amount of consumed molten silicon is measured by measuring a level of an interface of molten silicon in the main crucible;
a silicon material input operation in which an amount of the solid silicon material corresponding to the amount of the consumed molten silicon is supplied to the preliminary crucible;
a melting operation in which the solid silicon material is melted using a heater in the preliminary crucible;
and
a molten silicon replenishment operation in which silicon melted in the preliminary crucible is supplied to the main crucible.

2 more elements

Dependencies are inferred from the claim text.

Continuous ingot growth apparatus and control method thereof

Life of this patent

Continuous ingot growth apparatus and control method thereof

Life of this patent

Abstract

Claims29