Method and system for high-speed transient thermal simulation of electronic device

A system for high-speed transient thermal simulation of an electronic device, comprising;

• a data acquiring module, configured to acquire parameter data of the electronic device;
• a temperature and time relationship acquiring module, configured to, according to the acquired parameter data, calculate a dynamic weak balance relationship among a heat generation amount, an internal energy increment and a heat dissipation amount of the electronic device so as to obtain a functional relationship between an operating temperature and time of the electronic device;
• a trough temperature acquiring module, configured to, based on the obtained functional relationship between the operating temperature and time of the electronic device, obtain a trough temperature value of a transient temperature curve of the electronic device in a weak balance state by a limit solving algorithm;
• an initial temperature field generating module, configured to, based on the trough temperature value, set an initial temperature in a manner of loading a fixed-temperature heat source, and performing simulating calculation for a first preset number of cycles to obtain an initial temperature field;
• and
• a high-speed transient temperature change simulation result generating module, configured to, based on the initial temperature field, obtain a high-speed transient temperature change of the electronic device by the operation of a second preset number of pulse stress cycles;
• wherein,
• the functional relationship between the temperature T and the time t of the electronic device is as follows:
• T
• =
• T
• 0
• +
• Σ
• i
• ⁢
• P
• i
• ⁢
• D
• i
• ⁢
• t
• Σ
• i
• ⁢
• C
• i
• ⁢
• ρ
• i
• ⁢
• V
• i
• +
• Σ
• i
• ⁢
• h
• i
• ⁢
• A
• i
• ⁢
• t
• wherein Pi is power of each element, Di is a duty ratio of a power pulse period of each element, Ci is a constant-pressure specific heat capacity of each element, ρi is a density of each element, and Vi is a volume of each element;
• and T is a temperature of the device at time t, T0 is an ambient temperature, hi is a convective heat exchange coefficient between each element and air, and Ai is a convective heat exchange area between each element and air.