Film forming composition for lithography, resist pattern formation method, and circuit pattern formation method

A film forming composition for lithography comprising at least one selected from:

• a compound represented by general formula (1);
• a compound represented by general formula (3);
• a compound represented by formula (4);
• a compound represented by formula (5);
• and a resin obtained using the compound represented by formula (4) or the compound represented by formula (5) as a monomer,
• wherein
• R each independently represents an aromatic group having 6 to 36 carbon atoms and optionally having a substituent or a heteroatom;
• X each independently represents an alkanediyl group having 2 to 4 carbon atoms or alkanediylcarbonyl group having 1 to 4 carbon atoms, each of which optionally has a substituent;
• P each independently represents an alkyl group having 1 to 30 carbon atoms, aryl group having 6 to 30 carbon atoms, alkenyl group having 2 to 20 carbon atoms, or alkynyl group having 2 to 20 carbon atoms, each of which optionally has a substituent, or a hydrogen atom, a crosslinkable group, or a dissociable group;
• and
• m each independently represents an integer of 1 to 6 and n each independently represents an integer of 0 to 4,
• wherein
• R each independently represents an aromatic group having 6 to 36 carbon atoms and optionally having a substituent or a heteroatom;
• Rc each independently represents a single bond, a linear or branched alkylene group having 1 to 20 carbon atoms and optionally having a substituent, or an arylene group having 1 to 20 carbon atoms and optionally having a substituent;
• X each independently represents an alkanediyl group having 2 to 4 carbon atoms or alkanediylcarbonyl group having 1 to 4 carbon atoms, each of which optionally has a substituent;
• P each independently represents an alkyl group having 1 to 30 carbon atoms, aryl group having 6 to 30 carbon atoms, alkenyl group having 2 to 20 carbon atoms, or alkynyl group having 2 to 20 carbon atoms, each of which optionally has a substituent, or a hydrogen atom, a crosslinkable group, or a dissociable group;
• and
• m each independently represents an integer of 1 to 6 and n each independently represents an integer of 0 to 4,
• wherein
• A each independently represents an aromatic group having 6 to 10 carbon atoms;
• P each independently represents a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, a crosslinkable group, or a dissociable group;
• R1 represents an aromatic substituent having 6 to 10 carbon atoms or an alkyl group having 1 to 20 carbon atoms;
• Rx1 each independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a halogen;
• Ry1 each independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a halogen;
• and
• m represents an integer of 0 to 4 and n represents an integer of 0 to 4, and
• wherein
• A each independently represents an aromatic group having 6 to 10 carbon atoms;
• P each independently represents a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, a crosslinkable group, or a dissociable group;
• R2 represents an aromatic substituent having 6 to 10 carbon atoms or an alkyl group having 1 to 20 carbon atoms;
• Rx2 each independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a halogen;
• Ry2 each independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a halogen;
• and
• m represents an integer of 0 to 4 and n represents an integer of 0 to 4.