US 2023/0327641 A1 · ACOUSTIC WAVE DEVICE

Abstract

An acoustic wave device includes a silicon substrate, a polysilicon layer provided on the silicon substrate, a silicon oxide layer directly or indirectly provided on the polysilicon layer, a piezoelectric layer directly or indirectly provided on the silicon oxide layer, and an interdigital transducer electrode provided on the piezoelectric layer. A plane orientation of the silicon substrate is any one of (100), (110), and (111), and, where a wave length that is defined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the piezoelectric layer is less than or equal to about 1λ.

Claims22

Dependent claims

An acoustic wave device comprising:
a silicon substrate;
a polysilicon layer provided on the silicon substrate;
a silicon oxide layer directly or indirectly provided on the polysilicon layer;
a piezoelectric layer directly or indirectly provided on the silicon oxide layer;
and
an interdigital transducer electrode provided on the piezoelectric layer;
wherein
a plane orientation of the silicon substrate is any one of (100), (110), and (111);
and
where a wave length that is defined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the piezoelectric layer is less than or equal to about 1λ.

8 more elements

The acoustic wave device according to claim 1, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 2 is less than or equal to about −70:
y[deg.]=(78.1876454049157)+(−0.182894322081067)×(Si_psi[deg.]−28.1088082901554)+6.18390256271178×(t_Si2[λ]−0.39961139896373)+116.669335737855×(t_LT[λ]−0.169948186528498)+10.3573467893808×(t_SiO2[λ]−0.144041450777202)+0.0110735958981267×((Si_psi[deg.]−28.1088082901554)×(Si_psi[deg.]−28.1088082901554)−189.946709978791)+(−0.246858144090431)×((Si_psi[deg.]−28.1088082901554)×(t_Si2[λ]−0.39961139896373)+22.031016276383×((t_Si2[λ]−0.39961139896373)×(t_Si2[λ]−0.39961139896373)−0.0484389681602191)+(−X.0545756011518778)×((Si_psi[deg.]−28.1088082901554)×(t_LT[λ]−0.169948186528498))+(−32.427969747408)×((t_Si2[λ]−0.39961139896373)×((t_LT[λ]−0.169948186528498))+(−2.62164982026802)×((Si_psi[deg.]−28.1088082901554)×(t_SiO2[λ]−0.144041450777202))+(−112.759047075747)×((t_Si2[λ]−0.39961139896373)×((t_SiO2[λ]−0.144041450777202))+(−604.832727678973)×((t_LT[λ]−0.169948186528498)×((t_SiO2[λ]−0.144041450777202))+326.415587634024×((t_SiO2[λ]−0.144041450777202)×((t_SiO2[λ]−0.144041450777202)−0.00120154232328385). Equation 2

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The acoustic wave device according to claim 1, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 3 is less than or equal to about −70:
y[deg.]=(77.9109394183719)+(−0.0492368384201428)×(Si_psi[deg.]−45.2068126520681)+0.525124426223863×(t_Si2[λ]−0.426216545012165)+117.400884406373×(t_LT[λ]−0.174330900243311)+(−2.62484877324049)×(t_SiO2[λ]−0.15139902676399)+0.00307563131201403×((Si_psi[deg.]−45.2068126520681)×(Si_psi[deg.]−45.2068126520681)−182.925598356629)+(−0.0261801752592506)×((Si_psi[deg.]−45.2068126520681)×(t_Si2[λ]−0.426216545012165))+23.8987529211434×((t_Si2[λ]−0.426216545012165)×(t_Si2[λ]−0.426216545012165)−0.0481296027432942)+1.52616542281399×((Si_psi[deg.]−45.2068126520681))×(t_LT[λ]−0.174330900243311))+(−129.002027283367)×((t_Si2[λ]−0.426216545012165)×((t_LT[λ]−0.174330900243311))+(−1.22761778451819)×((Si_psi[deg.]−45.2068126520681)×((t_SiO2[λ]−0.15139902676399))+(−42.6041784800926)×((t_Si2[λ]−0.426216545012165)×(t_SiO2[λ]−0.15139902676399))+(−468.84116493048)×((t_LT[λ]−0.174330900243311)×(t_SiO2[λ]−0.15139902676399))+(−8.20635607220859)×((t_SiO2[λ]−0.15139902676399)×(t_SiO2[λ]−0.15139902676399)−0.0012830183932134). Equation 3

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10:

The acoustic wave device according to claim 1, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 6 is less than or equal to about −80:
y[deg.]=(−79.8924944284088)+0.033261334588906×(Si_psi[deg.]−39.3173431734317)+3.93783296791666×(t_Si2[λ]−0.416974169741698)+80.6680077909648×(t_LT[λ]−0.17140221402214)+13.2276438709535×(t_SiO2[λ]−0.148431734317343)+(−0.00907764275073328)×((Si_psi[deg.]−39.3173431734317)×(Si_psi[deg.]−39.3173431734317)−21.2129464468077)+0.000540095694459618×((Si_psi[deg.]−39.3173431734317)×(t_Si2[λ]−0.416974169741698))+5.79698263968963×((t_Si2[λ]−0.416974169741698)×(t_Si2[λ]−0.416974169741698)−0.0400439808826132)+(−0.136650035849863)×((Si_psi[deg.]−39.3173431734317)×(t_LT[λ]−0.17140221402214))+(−20.3328823416631)×((t_Si2[λ]−0.416974169741698)×(t_LT[λ]−0.17140221402214))+(−2.22480760136672)×((Si_psi[deg.]−39.3173431734317)×(t_SiO2[λ]−0.148431734317343))+(−13.0975601885972)×((t_Si2[λ]−0.416974169741698)×(t_SiO2[λ]−0.148431734317343))+(−511.743077543129)×((t_LT[λ]−0.17140221402214)×(t_SiO2[λ]−0.148431734317343))+137.213612130809×((t_SiO2[λ]−0.148431734317343)×(t_SiO2[λ]−0.148431734317343)−0.00135593537669694). Equation 6

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11:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (100);
in the silicon substrate of which the plane orientation is (100), a directional vector obtained by projecting the ZP-axis onto a (100) plane of the silicon substrate is k100, and an angle between the directional vector k100 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α100;
and
where the angle α100 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 7 is less than or equal to about −70:
y[deg.]=(−67.7782730918073)+0.0667732718475358×(Si_psi[deg.]−25.6259314456036)+(−6.71256568714434)×(t_Si2[λ]−0.426192250372578)+177.355083873051×(t_LT[λ]−0.16602086438151)+(−64.7093491078986)×(t_SiN[λ]−0.0465201192250378)+1.0890884781807×(t_SiO2[λ]−0.155793591654245)+0.000179985859065592×(Si_psi[deg.]−25.6259314456036)×(Si_psi[deg.]−25.6259314456036)−130.38317256758)+(−0.329348427439478)×((Si_psi[deg.]−25.6259314456036)×(t_Si2[λ]−0.426192250372578))+(−33.1084698932093)×((t_Si2[λ]−0.426192250372578)×(t_Si2[λ]−0.426192250372578)−0.0504801359160987)+1.52146775761601×((Si_psi[deg.]−25.6259314456036)×(t_LT[λ]−0.16602086438151))+14.59741625744683×((t_Si2[λ]−0.426192250372578)×(t_LT[λ]−0.16602086438151))+0×((t_LT[λ]−0.16602086438151)×(t_LT[λ]−0.16602086438151)−0.000544375123544922)+(−4.94058423048505)×((Si_psi[deg.]−25.6259314456036)×((t_SiN[λ]−0.0465201192250378))+138.799085167873×((t_Si×[λ]−0.426192250372578)×(t_SiN[λ]−0.0465201192250378))+1746.7447498235×((t_LT[λ]−0.16602086438151)×(t_SiN[λ]−0.0465201192250378))+2167.04168685901×((t_SiN[λ]−0.0465201192250378)×(t_SiN[λ]−0.0465201192250378)−0.000465274930537198)+(−0.931372972560935)×((Si_psi[deg.]−25.6259314456036)×(t_SiO2[λ]−0.155793591654245))+(−79.4377446578721)×((t_Si2[λ]−0.426192250372578)×(t_SiO2[λ]−0.155793591654245))+(−86.9697272546991)×((t_LT[λ]−0.16602086438151)×(t_SiO2[λ]−0.155793591654245))+1966.46522796354×((t_SiN[λ]−0.0465201192250378)×(t_SiO2[λ]−0.155793591654245))+169.040605778099×((t_SiO2[λ]−0.155793591654245)×(t_SiO2[λ]−0.155793591654245)−0.00164210493657841). Equation 7

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12:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 8 is less than or equal to about −70:
y[deg.]=(−75.0174122935603)+(−0.00810936153116664)×(Si_psi[deg.]−42.0340722495895)+1.98135617767495×(t_Si2[λ]−0.385026683087027)+143.173790020328×(t_LT[λ]−0.17306034482757)+16.4148627328736×(t_SiN[λ]−0.04207922824302)+50.4122771861205×(t_SiO2AR)−0.144909688013139)+0.00619821963137332×((Si_psi[deg.]−42.0340722495895)×(Si_psi[deg.]−42.0340722495895)−514.232829229589)+0.020323078287526×((Si_psi[deg.]−42.0340722495895)×(t_Si2[λ]−0.385026683087027))+1.15443318031007×((t_Si2[λ]−0.385026683087027)×(t_Si2[λ]−0.385026683087027)−0.0477966331139576)+0.472662465737381×((Si_psi[deg.]−42.0340722495895)×(t_LT[λ]−0.17306034482757))+(−105.2996012677)×((t_Si2[λ]−0.385026683087027)×(t_LT[λ]−0.17306034482757))+(−1.29517116632701)×((Si_psi[deg.]−42.0340722495895)×(t_SiN[λ]−0.04207922824302))+(−26.1801037669841)×((t_Si2[λ]−0.385026683087027)×(t_SiN[λ])−0.04207922824302))+168.1334353773×((t_LT[λ]−0.17306034482757)×(t_SiN[λ]−0.04207922824302))+2120.76431830662×((t_SiN[λ]−0.04207922824302)×(t_SiN[λ]−0.04207922824302)−0.000508197335364991)+(−0.687562974959064)×((Si_psi[deg.]−42.0340722495895)×(t_SiO2[λ]−0.144909688013139))+15.3482271106745×((t_Si2[λ]−0.385026683087027)×(t_SiO2[λ]−0.144909688013139))+(−358.720795782422)×((t_LT[λ]−0.17306034482757)×(t_SiO2[λ]−0.144909688013139))+1062.30534015379×((t_SiN[λ]−0.04207922824302)×(t_SiO2[λ]−0.144909688013139))+248.937429294479×((t_SiO2[λ]−0.144909688013139)×(t_SiO2[λ]−0.144909688013139)−0.00162330875671721). Equation 8

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13:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 9 is less than or equal to about −70:
y[deg.]=(−77.5405307874512)+0.00496521862619995×(Si_psi[deg.]−44.3479880774963)+(−3.07514699616305)×(t_Si2[λ]−0.395628415300543)+115.725430166886×(t_LT[λ]−0.173919523099848)+75.6109484741613×(t_SiN[λ]−0.0387729756582212)+29.9143205043822×(t_Si2[λ]−0.145404868355688)+0.00452378218877289×((Si_psi[deg.]−44.3479880774963)×(Si_psi[deg.]−44.3479880774963)−147.519490487682)+(−0.127045459018856)×((Si_psi[deg.]−44.3479880774963)×(t_Si2[λ]−0.395628415300543))+10.135015813019×((t_Si2[λ]−0.395628415300543)×(t_Si2[λ]−0.395628415300543)−0.0544331992323139)+0.267609205446981×((Si_psi[deg.]−44.3479880774963)×(t_LT[λ]−0.173919523099848))+(−151.966315117959)×((t_Si2[λ]−0.395628415300543)×(t_LT[λ]−0.173919523099848))+1.1818941610908×((Si_psi[deg.]−44.3479880774963)×(t_SiN[λ]−0.0387729756582212))+(−19.0228093275549)×((t_Si2[λ]−0.395628415300543)×(t_SiN[λ]−0.0387729756582212))+25.2693219567039×((t_LT[λ]−0.173919523099848)×(t_SiN[λ])−0.0387729756582212))+1545.52112794945×((t_SiN[λ]−0.0387729756582212)×(t_SiN[λ]−0.0387729756582212)−0.000519520243356094)+(−0.39161225199813)×((Si_psi[deg.]−44.3479880774963)×(t_SiO2[λ]−0.145404868355688))+22.0391330835907×((t_Si2[λ]−0.395628415300543)×(t_SiO2[λ]−0.145404868355688))+(−297.764935637906)×((t_LT[λ]−0.173919523099848)×(t_SiO2[λ]−0.145404868355688))+982.324171494675×((t_SiN[λ]−0.0387729756582212)×(t_SiO2[λ]−0.145404868355688))+420.570041600812×((t_SiO2[λ]−0.145404868355688)×(t_SiO2[λ]−0.145404868355688)−0.00124068307615005). Equation 9

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14:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (100);
in the silicon substrate of which the plane orientation is (100), a directional vector obtained by projecting the ZP-axis onto a (100) plane of the silicon substrate is k100, and an angle between the directional vector k100 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α100;
and
where the angle α100 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 10 is less than or equal to about −80:
y[deg.]=(−78.3557914112162)+(−0.00785147182473267)×(Si_psi[deg.]−24.9802110817942)+(−1.32878861667394)×(t_Si2[λ]−0.429221635883905)+(−41.7937386863014)×(t_LT[λ]−0.150923482849606)+35.6722090195008×(t_SiN[λ]−0.0500263852242746)+18.7743164986736×(t_SiO2[λ]−0.145646437994723)+(−0.000765722206063909)×((Si_psi[deg.]−24.9802110817942)×(Si_psi[deg.]−24.9802110817942)−153.396706024045)+(−0.0463379291760545)×((Si_psi[deg.]−24.9802110817942)×(t_Si2[λ]−0.429221635883905))+(−17.7293821535291)×((t_Si2[λ]−0.429221635883905)×(t_Si2[λ]−0.429221635883905)−0.0593208981070862)+(−1.3441873888418)×((Si_psi[deg.]−24.9802110817942)×(t_LT[λ]−0.150923482849606))+(−417.636233521175)×((t_Si2[λ]−0.429221635883905)×(t_LT[λ]−0.150923482849606))+(−0.487351707638102)×((Si_psi[deg.]−24.9802110817942)×(t_SiN[λ]−0.0500263852242746))+(−25.3025544220714)×((t_Si2[λ]−0.429221635883905)×(t_SiN[λ]−0.0500263852242746))+1666.3381560311×((t_LT[λ]−0.150923482849606)×(t_SiN[λ]−0.0500263852242746))+233.559062145034×((t_SiN[λ]−0.0500263852242746)×(t_SiN[λ]−0.0500263852242746)−0.000389115398806747)+(−0.148028298904273)×((Si_psi[deg.]−24.9802110817942)×(t_SiO2[λ]−0.145646437994723))+(−63.9722673973965)×((t_Si×[λ]−0.429221635883905)×(t_SiO2[λ]−0.145646437994723))+1197.10044921435×((t_LT[λ]−0.150923482849606)×(t_SiO2[λ]−0.145646437994723))+450.45656510444×((t_SiN[λ]−0.0500263852242746)×(t_SiO2[λ])−0.145646437994723))+(−37.7857111587959)×((t_SiO2[λ]−0.145646437994723)×(t_SiO2[λ]−0.145646437994723)−0.0017158749939084). Equation 10

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15:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 11 is less than or equal to about −80:
y[deg.]=(−79.9409825800918)+0.00367175250563163×(Si_psi[deg.]−42.1225309675259)+(−1.19942177285592)×(t_Si2[λ]−0.381570137261466)+91.8359644721651×(t_LT[λ]−0.164596585202533)+58.8431912005245×(t_SiN[λ]−0.0395698024774026)+16.9153289429696×(t_SiO2[λ]−0.13875125544024)+0.00130491910714855×((Si_psi[deg.]−42.1225309675259)×(Si_psi[deg.]−42.1225309675259)−385.786124427809)+0.0745672315210127×((Si_psi[deg]−42.1225309675259)×(t_Si2[λ]−0.381570137261466))+2.6699307571413×((t_Si2R1-0.381570137261466)×(t_Si2[λ]−0.381570137261466)−0.0456605075514713)+(−0.377889849052574)×((Si_psi[deg.]−42.1225309675259)×(t_LT[λ]−0.164596585202533))+(−43.4148735553507)×((t_Si2[λ]−0.381570137261466)×(t_LT[λ]−0.164596585202533))+(−0.378387168121428)×((Si_psi[deg.]−42.1225309675259)×(t_SiN[λ]−0.0395698024774026))+(−20.545088460627)×((t_Si2[λ]−0.381570137261466)×(t_SiN[λ]−0.0395698024774026))+232.919108783203×((t_LT[λ]−0.164596585202533)×(t_SiN[λ]−0.0395698024774026))+840.791113736585×((t_SiN[λ]−0.0395698024774026)×(t_SiN[λ]−0.0395698024774026)−0.000464855104179262)+0.190837727117146×((Si_psi[deg.]−42.1225309675259)×(t_SiO2[λ]−0.13875125544024))+0.695837098714372×((t_Si2[λ]−0.381570137261466)×(t_SiO2[λ]−0.13875125544024))+(−184.621593720628)×((t_LT[λ]−0.164596585202533)×(t_SiO2[λ]−0.13875125544024))+607.033426600094×((t_SiN[λ]−0.0395698024774026)×(t_SiO2[λ]−0.13875125544024))+142.721242732228×((t_SiO2[λ]−0.13875125544024)×(t_SiO2[λ]−0.13875125544024)−0.00152562510304392). Equation 11

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16:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 12 is less than or equal to about −80:
y[deg.]=(−79.8683540124538)+0.0118371753456289×(Si_psi[deg.]−44.4595052524568)+(−1.99138796522555)×(t_Si2[λ]−0.413673331074209)+88.0775643151379×(t_LT[λ]−0.167705862419511)+46.4734172707698×(t_SiN[λ]−0.0351321585903086)+14.4134894109961×(t_SiO2[λ]−0.142222975262623)+0.00167085752221365×((Si_psi[deg.]−44.4595052524568)×(Si_psi[deg.]−44.4595052524568)−128.282924729805)+(−0.0463012101323173)×((Si_psi[deg.]−44.4595052524568)×(t_Si2[λ]−0.413673331074209))+4.58192618035487×((t_Si2[λ]−0.413673331074209)×(t_Si2[λ]−0.413673331074209)−0.05167257915661)+0.524887931323933×((Si_psi[deg]−44.4595052524568)×(t_LT[λ]−0.167705862419511))+(−71.7492658390069)×((t_Si2[λ]−0.413673331074209)×(t_LT[λ]−0.167705862419511))+0.73863390529294×((Si_psi[deg.]−44.4595052524568)×(t_SiN[λ]−0.0351321585903086))+(−42.8957552454222)×((t_Si2[λ]−0.413673331074209)×(t_SiN[λ]−0.0351321585903086))+(−411.839865840595)×((t_LT[λ]−0.167705862419511)×(t_SiN[λ]−0.0351321585903086))+982.235412331017×((t_SiN[λ]−0.0351321585903086)×(t_SiN[λ]−0.0351321585903086)−0.000477142818756284)+(−0.236509133242243)×((Si_psi[deg.]−44.4595052524568)×(t_SiO2[λ]−0.142222975262623))+17.2370398551984×((t_Si2[λ]−0.413673331074209)×(t_SiO2[λ]−0.142222975262623))+(−469.933137492789)×((t_LT[λ]−0.167705862419511)×(t_SiO2[λ]−0.142222975262623))+541.748349798792×((t_SiN[λ]−0.0351321585903086)×(t_SiO2[λ]−0.142222975262623))+226.311489477246×((t_SiO2[λ]−0.142222975262623)×(t_SiO2[λ]−0.142222975262623)−0.00116579711361478). Equation 12

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17:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (100);
in the silicon substrate of which the plane orientation is (100), a directional vector obtained by projecting the ZP-axis onto a (100) plane of the silicon substrate is k100, and an angle between the directional vector k100 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α100;
and
where the angle α100 is Si_psi[deg.], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 13 is less than or equal to about −70:
y[deg.]=(−47.9946211404703)+1.21901050350713×(Si_psi[deg.]−19.0566037735849)+4.12041154986452×(t_Si2[λ]−0.408490566037736)+228.432202102143×(t_TiO2[λ]−0.0288364779874214)+(−33.1253993677708)×(t_SiO2[λ]−0.160062893081761)+0.140472008263765×((Si_psi[deg,]−19.0566037735849)×(Si_psi[deg.]−19.0566037735849)−38.1037142518096)+(−5.44594625372052)×((Si_psi[deg.]−19.0566037735849)×(t_Si2[λ]−0.408490566037736))+114.747133042737×((t_Si2[λ]−0.408490566037736)×(t_Si2[λ]−0.408490566037736)−0.0406983505399312)+10.4171695197979×((Si_psi[deg.]−19.0566037735849)×(t_TiO2[λ]−0.0288364779874214))+(−526.442885320397)×((t_Si2[λ]−0.408490566037736)×(t_TiO2[λ]−0.0288364779874214))+(−298.795469471375)×((t_TiO2[λ]−0.0288364779874214)×(t_TiO2[λ]−0.0288364779874214)−0.000424904078161465)+(−50.1009078768921)×((Si_psi[deg.]−19.0566037735849)×(t_SiO2[λ]−0.160062893081761))+1038.08065133921×((t_Si2[λ])−0.408490566037736)×(t_SiO2[λ]−0.160062893081761))+(−1286.74436136556)×((t_TiO2[λ]−0.0288364779874214)×(t_SiO2[λ]−0.160062893081761))+4158.8148931551×((t_SiO2[λ]−0.160062893081761)×(t_SiO2[λ]−0.160062893081761)−0.00134527906332819). Equation 13

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18:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 14 is less than or equal to about −70:
y[deg.]=(−66.0681190864303)+(−0.0323391014318074)×(Si_psi[deg.]−35.9295352323838)+0.997507104337367×(t_Si2[λ]−0.394527736131933)+155.754971155735×(t_TiO2[λ]−0.0378860569715143)+(−27.4736558331949)×(t_SiO2[λ]−0.149887556221888)+0.00791197424152189×((Si_psi[deg.]−35.9295352323838)×(Si_psi[deg.]−35.9295352323838)−256.81962242267)+0.212504000649305×((Si_psi[deg.]−35.9295352323838)×(t_Si2[λ]−0.394527736131933))+88.6294722534935×((t_Si2[λ]−0.394527736131933)×(t_Si2[λ]−0.394527736131933)−0.0392241772666888)+0.636412965393882×((Si_psi[deg.]−35.9295352323838)×(t_TiO2[λ]−0.0378860569715143))+157.120610191294×((t_Si2[λ]−0.394527736131933)×(t_TiO2[λ]−0.0378860569715143))+544.188337615988×((t_TiO2[λ]−0.0378860569715143)×(t_TiO2[λ]−0.0378860569715143)−0.000522930045472021)+0.408031229502175×((Si_psi[deg.]−35.9295352323838)×(t_SiO2[λ]−0.149887556221888))+(−46.0736528123303)×((t_Si2[λ]−0.394527736131933)×(t_SiO2[λ]−0.149887556221888))+(−1322.9465191866)×((t_TiO2[λ]−0.0378860569715143)×(t_SiO2[λ]−0.149887556221888))+359.098768522305×((t_SiO2[λ])−0.149887556221888)×(t_SiO2[λ]−0.149887556221888)−0.00163979245384803). Equation 14

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19:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 15 is less than or equal to about −70:
y[deg.]=(−69.4030815485713)+(−0.269371737613053)×(Si_psi[deg.]−33.8730694980695)+(−4.68577968707475)×(t_Si2[λ]−0.440745656370656)+176.177168052005×(t_LT[λ]−0.168858590733587)+73.1412385401181×(t_TiO2[λ]−0.0300916988416992)+(−12.3739066281753)×(t_SiO2[λ]−0.154983108108108)+0.00777703537774127C((Si_psi[deg.]−33.8730694980695)×(Si_psi[deg.]−33.8730694980695)−508.406668570442)+0.121265989497045×((Si_psi[deg.]−33.8730694980695)×(t_Si2[λ]−0.440745656370656))+17.8168374568741×((t_Si2[λ]−0.440745656370656)×(t_Si2[λ]−0.440745656370656)−0.0493816592475423)+1.34130425597794×((Si_psi[deg.]−33.8730694980695)×(t_LT[λ]−0.168858590733587))+(−5.11032690396319)×((t_Si2[λ]−0.440745656370656)×(t_LT[λ]−0.168858590733587))+2.48016332864734×((Si_psi[deg.]−33.8730694980695)×(t_TiO2[λ]−0.0300916988416992))+77.8145877606436×((t_Si2[λ]−0.440745656370656)×(t_TiO2[λ]−0.0300916988416992))+2112.87481803881×((t_LT[λ]−0.168858590733587)×(t_TiO2[λ]−0.0300916988416992))+196.040518466468×((t_TiO2[λ]−0.0300916988416992)×(t_TiO2[λ]−0.0300916988416992)−0.000562395066225887)+(−0.969575065396993)×((Si_psi[deg.]−33.8730694980695)×(t_SiO2[λ]−0.154983108108108))+(−138.70694337489)×((t_Si2[λ]−0.440745656370656)×(t_SiO2[λ]−0.154983108108108))+(−1100.04408119143)×((t_LT[λ]−0.168858590733587)×(t_SiO2[λ]−0.154983108108108))+74.9944030678128×((t_TiO2[λ]−0.0300916988416992)×(t_SiO2[λ]−0.154983108108108))+117.812778429437×((t_SiO2[λ]−0.154983108108108)×(t_SiO2[λ]−0.154983108108108)−0.00117057162586093). Equation 15

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20:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 16 is less than or equal to about −80:
y[deg.]=(−77.5229944626225)+(−0.0245637365901893)×(Si_psi[deg.]−34.5205479452055)+(−1.18326432300356)×(t_Si2[λ]−0.408904109589041)+131.275052857081×(t_TiO2[λ]−0.0160045662100456)+(−18.9167659640434)×(t_SiO2[λ]−0.150228310502283)+0.00233031321934999×((Si_psi[deg.]−34.5205479452055)×(Si_psi[deg.]−34.5205479452055)−75.9116782385689)+(−0.0809397438263331)×((Si_psi[deg.]−34.5205479452055)×(t_Si2[λ]−0.408904109589041))+43.1653284334043×((t_Si2[λ]−0.408904109589041)×(t_Si2[λ]−0.408904109589041)−0.0169869268780884)+(−0.255179621676294)×((Si_psi[deg.]−34.5205479452055)×(t_TiO2[λ])−0.0160045662100456))+(−101.438420329361)×((t_Si2[λ]−0.408904109589041)×(t_TiO2[λ]−0.0160045662100456))+(−834.553397134957)×((t_TiO2[λ]−0.0160045662100456)×(t_TiO2[λ]−0.0160045662100456)−0.000126844728008173)+0.935627393438751×((Si_psi[deg.]−34.5205479452055)×(t_SiO2[λ])−0.150228310502283))+(−21.1152350576513)×((t_Si2[λ]−0.408904109589041)×(t_SiO2[λ]−0.150228310502283))+(−41.8110780477077)×((t_TiO2[λ]−0.0160045662100456)×(t_SiO2[λ]−0.150228310502283))+263.939639423742×((t_SiO2[λ]−0.150228310502283)×(t_SiO2[λ]−0.150228310502283)−0.00160953691541044). Equation 16

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21:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 17 is less than or equal to about −80:
y[deg.]=(−78.9096176038851)+0.034903516437231×(Si_psi[deg.]−45.8453473132372)+(−2.02533584474356)×(t_Si2[λ]−0.421068152031454)+81.4363661536651×(t_LT[λ]−0.156225425950199)+71.7903756668229×(t_TiO2[λ]−0.0334862385321101)+(−3.53261283561548)×(t_SiO2[λ]−0.149606815203146)+0.00246176329064131×((Si_psi[deg.]−45.8453473132372)×(Si_psi[deg.]−45.8453473132372)−143.191023568758)+(−0.0293712406566626)×((Si_psi[deg.]−45.8453473132372)×(t_Si2[λ]−0.421068152031454))+0.972512275661977×((t_Si2[λ]−0.421068152031454)×(t_Si2[λ]−0.421068152031454)−0.0430997109516307)+0.30260322985253×((Si_psi[deg.]−45.8453473132372)×(t_LT[λ]−0.156225425950199))+(−23.2249863870645)×((t_Si2[λ]−0.421068152031454)×(t_LT[λ]−0.156225425950199))+0.513496313876766×((Si_psi[deg.]−45.8453473132372)×(t_TiO2[λ]−0.0334862385321101))+(−143.065209527507)×((t_Si2[λ]−0.421068152031454)×(t_TiO2[λ]−0.0334862385321101))+(−324.329178613173)×((t_LT[λ]−0.156225425950199)×(t_TiO2[λ]−0.0334862385321101))+(−98.4001544132927)×((t_TiO2[λ]−0.0334862385321101)×(t_TiO2[λ]−0.0334862385321101)−0.000480867110753061)+(−1.15889670547368)×((Si_psi[deg.]−45.8453473132372)×(t_SiO2[λ]−0.149606815203146))+(−50.3263112114924)×((t_Si2[λ]−0.421068152031454)×(t_SiO2[λ]−0.149606815203146))+(−209.199256641353)×((t_LT[λ]−0.156225425950199)×(t_SiO2[λ]−0.149606815203146))+90.23187502294813×((t_TiO2[λ]−0.0334862385321101)×(t_SiO2[λ]−0.149606815203146))+347.448658314796×((t_SiO2[λ]−0.149606815203146)×(t_SiO2[λ]−0.149606815203146)−0.00114008131659363) Equation 17

5 more elements

Facts

Application

18/124,592Filed 22 Mar 2023

Priority

JP 2020-1690956 Oct 2020

Published

12 Oct 2023

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H03H 9/02574
Characteristics of substrate, e.g. cutting angles: of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical…
H03H 9/02559
Characteristics of substrate, e.g. cutting angles: of lithium niobate or lithium-tantalate substrates
H03H 9/02566
Characteristics of substrate, e.g. cutting angles: of semiconductor substrates
H03H 9/25
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators: constructional features of resonators using…

Abstract

Claims22

Dependent claims

An acoustic wave device comprising:
a silicon substrate;
a polysilicon layer provided on the silicon substrate;
a silicon oxide layer directly or indirectly provided on the polysilicon layer;
a piezoelectric layer directly or indirectly provided on the silicon oxide layer;
and
an interdigital transducer electrode provided on the piezoelectric layer;
wherein
a plane orientation of the silicon substrate is any one of (100), (110), and (111);
and
where a wave length that is defined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the piezoelectric layer is less than or equal to about 1λ.

8 more elements

The acoustic wave device according to claim 1, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 2 is less than or equal to about −70:
y[deg.]=(78.1876454049157)+(−0.182894322081067)×(Si_psi[deg.]−28.1088082901554)+6.18390256271178×(t_Si2[λ]−0.39961139896373)+116.669335737855×(t_LT[λ]−0.169948186528498)+10.3573467893808×(t_SiO2[λ]−0.144041450777202)+0.0110735958981267×((Si_psi[deg.]−28.1088082901554)×(Si_psi[deg.]−28.1088082901554)−189.946709978791)+(−0.246858144090431)×((Si_psi[deg.]−28.1088082901554)×(t_Si2[λ]−0.39961139896373)+22.031016276383×((t_Si2[λ]−0.39961139896373)×(t_Si2[λ]−0.39961139896373)−0.0484389681602191)+(−X.0545756011518778)×((Si_psi[deg.]−28.1088082901554)×(t_LT[λ]−0.169948186528498))+(−32.427969747408)×((t_Si2[λ]−0.39961139896373)×((t_LT[λ]−0.169948186528498))+(−2.62164982026802)×((Si_psi[deg.]−28.1088082901554)×(t_SiO2[λ]−0.144041450777202))+(−112.759047075747)×((t_Si2[λ]−0.39961139896373)×((t_SiO2[λ]−0.144041450777202))+(−604.832727678973)×((t_LT[λ]−0.169948186528498)×((t_SiO2[λ]−0.144041450777202))+326.415587634024×((t_SiO2[λ]−0.144041450777202)×((t_SiO2[λ]−0.144041450777202)−0.00120154232328385). Equation 2

5 more elements

The acoustic wave device according to claim 1, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 3 is less than or equal to about −70:
y[deg.]=(77.9109394183719)+(−0.0492368384201428)×(Si_psi[deg.]−45.2068126520681)+0.525124426223863×(t_Si2[λ]−0.426216545012165)+117.400884406373×(t_LT[λ]−0.174330900243311)+(−2.62484877324049)×(t_SiO2[λ]−0.15139902676399)+0.00307563131201403×((Si_psi[deg.]−45.2068126520681)×(Si_psi[deg.]−45.2068126520681)−182.925598356629)+(−0.0261801752592506)×((Si_psi[deg.]−45.2068126520681)×(t_Si2[λ]−0.426216545012165))+23.8987529211434×((t_Si2[λ]−0.426216545012165)×(t_Si2[λ]−0.426216545012165)−0.0481296027432942)+1.52616542281399×((Si_psi[deg.]−45.2068126520681))×(t_LT[λ]−0.174330900243311))+(−129.002027283367)×((t_Si2[λ]−0.426216545012165)×((t_LT[λ]−0.174330900243311))+(−1.22761778451819)×((Si_psi[deg.]−45.2068126520681)×((t_SiO2[λ]−0.15139902676399))+(−42.6041784800926)×((t_Si2[λ]−0.426216545012165)×(t_SiO2[λ]−0.15139902676399))+(−468.84116493048)×((t_LT[λ]−0.174330900243311)×(t_SiO2[λ]−0.15139902676399))+(−8.20635607220859)×((t_SiO2[λ]−0.15139902676399)×(t_SiO2[λ]−0.15139902676399)−0.0012830183932134). Equation 3

5 more elements

10:

The acoustic wave device according to claim 1, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 6 is less than or equal to about −80:
y[deg.]=(−79.8924944284088)+0.033261334588906×(Si_psi[deg.]−39.3173431734317)+3.93783296791666×(t_Si2[λ]−0.416974169741698)+80.6680077909648×(t_LT[λ]−0.17140221402214)+13.2276438709535×(t_SiO2[λ]−0.148431734317343)+(−0.00907764275073328)×((Si_psi[deg.]−39.3173431734317)×(Si_psi[deg.]−39.3173431734317)−21.2129464468077)+0.000540095694459618×((Si_psi[deg.]−39.3173431734317)×(t_Si2[λ]−0.416974169741698))+5.79698263968963×((t_Si2[λ]−0.416974169741698)×(t_Si2[λ]−0.416974169741698)−0.0400439808826132)+(−0.136650035849863)×((Si_psi[deg.]−39.3173431734317)×(t_LT[λ]−0.17140221402214))+(−20.3328823416631)×((t_Si2[λ]−0.416974169741698)×(t_LT[λ]−0.17140221402214))+(−2.22480760136672)×((Si_psi[deg.]−39.3173431734317)×(t_SiO2[λ]−0.148431734317343))+(−13.0975601885972)×((t_Si2[λ]−0.416974169741698)×(t_SiO2[λ]−0.148431734317343))+(−511.743077543129)×((t_LT[λ]−0.17140221402214)×(t_SiO2[λ]−0.148431734317343))+137.213612130809×((t_SiO2[λ]−0.148431734317343)×(t_SiO2[λ]−0.148431734317343)−0.00135593537669694). Equation 6

5 more elements

11:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (100);
in the silicon substrate of which the plane orientation is (100), a directional vector obtained by projecting the ZP-axis onto a (100) plane of the silicon substrate is k100, and an angle between the directional vector k100 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α100;
and
where the angle α100 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 7 is less than or equal to about −70:
y[deg.]=(−67.7782730918073)+0.0667732718475358×(Si_psi[deg.]−25.6259314456036)+(−6.71256568714434)×(t_Si2[λ]−0.426192250372578)+177.355083873051×(t_LT[λ]−0.16602086438151)+(−64.7093491078986)×(t_SiN[λ]−0.0465201192250378)+1.0890884781807×(t_SiO2[λ]−0.155793591654245)+0.000179985859065592×(Si_psi[deg.]−25.6259314456036)×(Si_psi[deg.]−25.6259314456036)−130.38317256758)+(−0.329348427439478)×((Si_psi[deg.]−25.6259314456036)×(t_Si2[λ]−0.426192250372578))+(−33.1084698932093)×((t_Si2[λ]−0.426192250372578)×(t_Si2[λ]−0.426192250372578)−0.0504801359160987)+1.52146775761601×((Si_psi[deg.]−25.6259314456036)×(t_LT[λ]−0.16602086438151))+14.59741625744683×((t_Si2[λ]−0.426192250372578)×(t_LT[λ]−0.16602086438151))+0×((t_LT[λ]−0.16602086438151)×(t_LT[λ]−0.16602086438151)−0.000544375123544922)+(−4.94058423048505)×((Si_psi[deg.]−25.6259314456036)×((t_SiN[λ]−0.0465201192250378))+138.799085167873×((t_Si×[λ]−0.426192250372578)×(t_SiN[λ]−0.0465201192250378))+1746.7447498235×((t_LT[λ]−0.16602086438151)×(t_SiN[λ]−0.0465201192250378))+2167.04168685901×((t_SiN[λ]−0.0465201192250378)×(t_SiN[λ]−0.0465201192250378)−0.000465274930537198)+(−0.931372972560935)×((Si_psi[deg.]−25.6259314456036)×(t_SiO2[λ]−0.155793591654245))+(−79.4377446578721)×((t_Si2[λ]−0.426192250372578)×(t_SiO2[λ]−0.155793591654245))+(−86.9697272546991)×((t_LT[λ]−0.16602086438151)×(t_SiO2[λ]−0.155793591654245))+1966.46522796354×((t_SiN[λ]−0.0465201192250378)×(t_SiO2[λ]−0.155793591654245))+169.040605778099×((t_SiO2[λ]−0.155793591654245)×(t_SiO2[λ]−0.155793591654245)−0.00164210493657841). Equation 7

5 more elements

12:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 8 is less than or equal to about −70:
y[deg.]=(−75.0174122935603)+(−0.00810936153116664)×(Si_psi[deg.]−42.0340722495895)+1.98135617767495×(t_Si2[λ]−0.385026683087027)+143.173790020328×(t_LT[λ]−0.17306034482757)+16.4148627328736×(t_SiN[λ]−0.04207922824302)+50.4122771861205×(t_SiO2AR)−0.144909688013139)+0.00619821963137332×((Si_psi[deg.]−42.0340722495895)×(Si_psi[deg.]−42.0340722495895)−514.232829229589)+0.020323078287526×((Si_psi[deg.]−42.0340722495895)×(t_Si2[λ]−0.385026683087027))+1.15443318031007×((t_Si2[λ]−0.385026683087027)×(t_Si2[λ]−0.385026683087027)−0.0477966331139576)+0.472662465737381×((Si_psi[deg.]−42.0340722495895)×(t_LT[λ]−0.17306034482757))+(−105.2996012677)×((t_Si2[λ]−0.385026683087027)×(t_LT[λ]−0.17306034482757))+(−1.29517116632701)×((Si_psi[deg.]−42.0340722495895)×(t_SiN[λ]−0.04207922824302))+(−26.1801037669841)×((t_Si2[λ]−0.385026683087027)×(t_SiN[λ])−0.04207922824302))+168.1334353773×((t_LT[λ]−0.17306034482757)×(t_SiN[λ]−0.04207922824302))+2120.76431830662×((t_SiN[λ]−0.04207922824302)×(t_SiN[λ]−0.04207922824302)−0.000508197335364991)+(−0.687562974959064)×((Si_psi[deg.]−42.0340722495895)×(t_SiO2[λ]−0.144909688013139))+15.3482271106745×((t_Si2[λ]−0.385026683087027)×(t_SiO2[λ]−0.144909688013139))+(−358.720795782422)×((t_LT[λ]−0.17306034482757)×(t_SiO2[λ]−0.144909688013139))+1062.30534015379×((t_SiN[λ]−0.04207922824302)×(t_SiO2[λ]−0.144909688013139))+248.937429294479×((t_SiO2[λ]−0.144909688013139)×(t_SiO2[λ]−0.144909688013139)−0.00162330875671721). Equation 8

5 more elements

13:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 9 is less than or equal to about −70:
y[deg.]=(−77.5405307874512)+0.00496521862619995×(Si_psi[deg.]−44.3479880774963)+(−3.07514699616305)×(t_Si2[λ]−0.395628415300543)+115.725430166886×(t_LT[λ]−0.173919523099848)+75.6109484741613×(t_SiN[λ]−0.0387729756582212)+29.9143205043822×(t_Si2[λ]−0.145404868355688)+0.00452378218877289×((Si_psi[deg.]−44.3479880774963)×(Si_psi[deg.]−44.3479880774963)−147.519490487682)+(−0.127045459018856)×((Si_psi[deg.]−44.3479880774963)×(t_Si2[λ]−0.395628415300543))+10.135015813019×((t_Si2[λ]−0.395628415300543)×(t_Si2[λ]−0.395628415300543)−0.0544331992323139)+0.267609205446981×((Si_psi[deg.]−44.3479880774963)×(t_LT[λ]−0.173919523099848))+(−151.966315117959)×((t_Si2[λ]−0.395628415300543)×(t_LT[λ]−0.173919523099848))+1.1818941610908×((Si_psi[deg.]−44.3479880774963)×(t_SiN[λ]−0.0387729756582212))+(−19.0228093275549)×((t_Si2[λ]−0.395628415300543)×(t_SiN[λ]−0.0387729756582212))+25.2693219567039×((t_LT[λ]−0.173919523099848)×(t_SiN[λ])−0.0387729756582212))+1545.52112794945×((t_SiN[λ]−0.0387729756582212)×(t_SiN[λ]−0.0387729756582212)−0.000519520243356094)+(−0.39161225199813)×((Si_psi[deg.]−44.3479880774963)×(t_SiO2[λ]−0.145404868355688))+22.0391330835907×((t_Si2[λ]−0.395628415300543)×(t_SiO2[λ]−0.145404868355688))+(−297.764935637906)×((t_LT[λ]−0.173919523099848)×(t_SiO2[λ]−0.145404868355688))+982.324171494675×((t_SiN[λ]−0.0387729756582212)×(t_SiO2[λ]−0.145404868355688))+420.570041600812×((t_SiO2[λ]−0.145404868355688)×(t_SiO2[λ]−0.145404868355688)−0.00124068307615005). Equation 9

5 more elements

14:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (100);
in the silicon substrate of which the plane orientation is (100), a directional vector obtained by projecting the ZP-axis onto a (100) plane of the silicon substrate is k100, and an angle between the directional vector k100 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α100;
and
where the angle α100 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 10 is less than or equal to about −80:
y[deg.]=(−78.3557914112162)+(−0.00785147182473267)×(Si_psi[deg.]−24.9802110817942)+(−1.32878861667394)×(t_Si2[λ]−0.429221635883905)+(−41.7937386863014)×(t_LT[λ]−0.150923482849606)+35.6722090195008×(t_SiN[λ]−0.0500263852242746)+18.7743164986736×(t_SiO2[λ]−0.145646437994723)+(−0.000765722206063909)×((Si_psi[deg.]−24.9802110817942)×(Si_psi[deg.]−24.9802110817942)−153.396706024045)+(−0.0463379291760545)×((Si_psi[deg.]−24.9802110817942)×(t_Si2[λ]−0.429221635883905))+(−17.7293821535291)×((t_Si2[λ]−0.429221635883905)×(t_Si2[λ]−0.429221635883905)−0.0593208981070862)+(−1.3441873888418)×((Si_psi[deg.]−24.9802110817942)×(t_LT[λ]−0.150923482849606))+(−417.636233521175)×((t_Si2[λ]−0.429221635883905)×(t_LT[λ]−0.150923482849606))+(−0.487351707638102)×((Si_psi[deg.]−24.9802110817942)×(t_SiN[λ]−0.0500263852242746))+(−25.3025544220714)×((t_Si2[λ]−0.429221635883905)×(t_SiN[λ]−0.0500263852242746))+1666.3381560311×((t_LT[λ]−0.150923482849606)×(t_SiN[λ]−0.0500263852242746))+233.559062145034×((t_SiN[λ]−0.0500263852242746)×(t_SiN[λ]−0.0500263852242746)−0.000389115398806747)+(−0.148028298904273)×((Si_psi[deg.]−24.9802110817942)×(t_SiO2[λ]−0.145646437994723))+(−63.9722673973965)×((t_Si×[λ]−0.429221635883905)×(t_SiO2[λ]−0.145646437994723))+1197.10044921435×((t_LT[λ]−0.150923482849606)×(t_SiO2[λ]−0.145646437994723))+450.45656510444×((t_SiN[λ]−0.0500263852242746)×(t_SiO2[λ])−0.145646437994723))+(−37.7857111587959)×((t_SiO2[λ]−0.145646437994723)×(t_SiO2[λ]−0.145646437994723)−0.0017158749939084). Equation 10

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15:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 11 is less than or equal to about −80:
y[deg.]=(−79.9409825800918)+0.00367175250563163×(Si_psi[deg.]−42.1225309675259)+(−1.19942177285592)×(t_Si2[λ]−0.381570137261466)+91.8359644721651×(t_LT[λ]−0.164596585202533)+58.8431912005245×(t_SiN[λ]−0.0395698024774026)+16.9153289429696×(t_SiO2[λ]−0.13875125544024)+0.00130491910714855×((Si_psi[deg.]−42.1225309675259)×(Si_psi[deg.]−42.1225309675259)−385.786124427809)+0.0745672315210127×((Si_psi[deg]−42.1225309675259)×(t_Si2[λ]−0.381570137261466))+2.6699307571413×((t_Si2R1-0.381570137261466)×(t_Si2[λ]−0.381570137261466)−0.0456605075514713)+(−0.377889849052574)×((Si_psi[deg.]−42.1225309675259)×(t_LT[λ]−0.164596585202533))+(−43.4148735553507)×((t_Si2[λ]−0.381570137261466)×(t_LT[λ]−0.164596585202533))+(−0.378387168121428)×((Si_psi[deg.]−42.1225309675259)×(t_SiN[λ]−0.0395698024774026))+(−20.545088460627)×((t_Si2[λ]−0.381570137261466)×(t_SiN[λ]−0.0395698024774026))+232.919108783203×((t_LT[λ]−0.164596585202533)×(t_SiN[λ]−0.0395698024774026))+840.791113736585×((t_SiN[λ]−0.0395698024774026)×(t_SiN[λ]−0.0395698024774026)−0.000464855104179262)+0.190837727117146×((Si_psi[deg.]−42.1225309675259)×(t_SiO2[λ]−0.13875125544024))+0.695837098714372×((t_Si2[λ]−0.381570137261466)×(t_SiO2[λ]−0.13875125544024))+(−184.621593720628)×((t_LT[λ]−0.164596585202533)×(t_SiO2[λ]−0.13875125544024))+607.033426600094×((t_SiN[λ]−0.0395698024774026)×(t_SiO2[λ]−0.13875125544024))+142.721242732228×((t_SiO2[λ]−0.13875125544024)×(t_SiO2[λ]−0.13875125544024)−0.00152562510304392). Equation 11

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16:

The acoustic wave device according to claim 2, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the silicon nitride layer is t_SiN[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_SiN[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 12 is less than or equal to about −80:
y[deg.]=(−79.8683540124538)+0.0118371753456289×(Si_psi[deg.]−44.4595052524568)+(−1.99138796522555)×(t_Si2[λ]−0.413673331074209)+88.0775643151379×(t_LT[λ]−0.167705862419511)+46.4734172707698×(t_SiN[λ]−0.0351321585903086)+14.4134894109961×(t_SiO2[λ]−0.142222975262623)+0.00167085752221365×((Si_psi[deg.]−44.4595052524568)×(Si_psi[deg.]−44.4595052524568)−128.282924729805)+(−0.0463012101323173)×((Si_psi[deg.]−44.4595052524568)×(t_Si2[λ]−0.413673331074209))+4.58192618035487×((t_Si2[λ]−0.413673331074209)×(t_Si2[λ]−0.413673331074209)−0.05167257915661)+0.524887931323933×((Si_psi[deg]−44.4595052524568)×(t_LT[λ]−0.167705862419511))+(−71.7492658390069)×((t_Si2[λ]−0.413673331074209)×(t_LT[λ]−0.167705862419511))+0.73863390529294×((Si_psi[deg.]−44.4595052524568)×(t_SiN[λ]−0.0351321585903086))+(−42.8957552454222)×((t_Si2[λ]−0.413673331074209)×(t_SiN[λ]−0.0351321585903086))+(−411.839865840595)×((t_LT[λ]−0.167705862419511)×(t_SiN[λ]−0.0351321585903086))+982.235412331017×((t_SiN[λ]−0.0351321585903086)×(t_SiN[λ]−0.0351321585903086)−0.000477142818756284)+(−0.236509133242243)×((Si_psi[deg.]−44.4595052524568)×(t_SiO2[λ]−0.142222975262623))+17.2370398551984×((t_Si2[λ]−0.413673331074209)×(t_SiO2[λ]−0.142222975262623))+(−469.933137492789)×((t_LT[λ]−0.167705862419511)×(t_SiO2[λ]−0.142222975262623))+541.748349798792×((t_SiN[λ]−0.0351321585903086)×(t_SiO2[λ]−0.142222975262623))+226.311489477246×((t_SiO2[λ]−0.142222975262623)×(t_SiO2[λ]−0.142222975262623)−0.00116579711361478). Equation 12

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17:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (100);
in the silicon substrate of which the plane orientation is (100), a directional vector obtained by projecting the ZP-axis onto a (100) plane of the silicon substrate is k100, and an angle between the directional vector k100 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α100;
and
where the angle α100 is Si_psi[deg.], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 13 is less than or equal to about −70:
y[deg.]=(−47.9946211404703)+1.21901050350713×(Si_psi[deg.]−19.0566037735849)+4.12041154986452×(t_Si2[λ]−0.408490566037736)+228.432202102143×(t_TiO2[λ]−0.0288364779874214)+(−33.1253993677708)×(t_SiO2[λ]−0.160062893081761)+0.140472008263765×((Si_psi[deg,]−19.0566037735849)×(Si_psi[deg.]−19.0566037735849)−38.1037142518096)+(−5.44594625372052)×((Si_psi[deg.]−19.0566037735849)×(t_Si2[λ]−0.408490566037736))+114.747133042737×((t_Si2[λ]−0.408490566037736)×(t_Si2[λ]−0.408490566037736)−0.0406983505399312)+10.4171695197979×((Si_psi[deg.]−19.0566037735849)×(t_TiO2[λ]−0.0288364779874214))+(−526.442885320397)×((t_Si2[λ]−0.408490566037736)×(t_TiO2[λ]−0.0288364779874214))+(−298.795469471375)×((t_TiO2[λ]−0.0288364779874214)×(t_TiO2[λ]−0.0288364779874214)−0.000424904078161465)+(−50.1009078768921)×((Si_psi[deg.]−19.0566037735849)×(t_SiO2[λ]−0.160062893081761))+1038.08065133921×((t_Si2[λ])−0.408490566037736)×(t_SiO2[λ]−0.160062893081761))+(−1286.74436136556)×((t_TiO2[λ]−0.0288364779874214)×(t_SiO2[λ]−0.160062893081761))+4158.8148931551×((t_SiO2[λ]−0.160062893081761)×(t_SiO2[λ]−0.160062893081761)−0.00134527906332819). Equation 13

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18:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 14 is less than or equal to about −70:
y[deg.]=(−66.0681190864303)+(−0.0323391014318074)×(Si_psi[deg.]−35.9295352323838)+0.997507104337367×(t_Si2[λ]−0.394527736131933)+155.754971155735×(t_TiO2[λ]−0.0378860569715143)+(−27.4736558331949)×(t_SiO2[λ]−0.149887556221888)+0.00791197424152189×((Si_psi[deg.]−35.9295352323838)×(Si_psi[deg.]−35.9295352323838)−256.81962242267)+0.212504000649305×((Si_psi[deg.]−35.9295352323838)×(t_Si2[λ]−0.394527736131933))+88.6294722534935×((t_Si2[λ]−0.394527736131933)×(t_Si2[λ]−0.394527736131933)−0.0392241772666888)+0.636412965393882×((Si_psi[deg.]−35.9295352323838)×(t_TiO2[λ]−0.0378860569715143))+157.120610191294×((t_Si2[λ]−0.394527736131933)×(t_TiO2[λ]−0.0378860569715143))+544.188337615988×((t_TiO2[λ]−0.0378860569715143)×(t_TiO2[λ]−0.0378860569715143)−0.000522930045472021)+0.408031229502175×((Si_psi[deg.]−35.9295352323838)×(t_SiO2[λ]−0.149887556221888))+(−46.0736528123303)×((t_Si2[λ]−0.394527736131933)×(t_SiO2[λ]−0.149887556221888))+(−1322.9465191866)×((t_TiO2[λ]−0.0378860569715143)×(t_SiO2[λ]−0.149887556221888))+359.098768522305×((t_SiO2[λ])−0.149887556221888)×(t_SiO2[λ]−0.149887556221888)−0.00163979245384803). Equation 14

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19:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 15 is less than or equal to about −70:
y[deg.]=(−69.4030815485713)+(−0.269371737613053)×(Si_psi[deg.]−33.8730694980695)+(−4.68577968707475)×(t_Si2[λ]−0.440745656370656)+176.177168052005×(t_LT[λ]−0.168858590733587)+73.1412385401181×(t_TiO2[λ]−0.0300916988416992)+(−12.3739066281753)×(t_SiO2[λ]−0.154983108108108)+0.00777703537774127C((Si_psi[deg.]−33.8730694980695)×(Si_psi[deg.]−33.8730694980695)−508.406668570442)+0.121265989497045×((Si_psi[deg.]−33.8730694980695)×(t_Si2[λ]−0.440745656370656))+17.8168374568741×((t_Si2[λ]−0.440745656370656)×(t_Si2[λ]−0.440745656370656)−0.0493816592475423)+1.34130425597794×((Si_psi[deg.]−33.8730694980695)×(t_LT[λ]−0.168858590733587))+(−5.11032690396319)×((t_Si2[λ]−0.440745656370656)×(t_LT[λ]−0.168858590733587))+2.48016332864734×((Si_psi[deg.]−33.8730694980695)×(t_TiO2[λ]−0.0300916988416992))+77.8145877606436×((t_Si2[λ]−0.440745656370656)×(t_TiO2[λ]−0.0300916988416992))+2112.87481803881×((t_LT[λ]−0.168858590733587)×(t_TiO2[λ]−0.0300916988416992))+196.040518466468×((t_TiO2[λ]−0.0300916988416992)×(t_TiO2[λ]−0.0300916988416992)−0.000562395066225887)+(−0.969575065396993)×((Si_psi[deg.]−33.8730694980695)×(t_SiO2[λ]−0.154983108108108))+(−138.70694337489)×((t_Si2[λ]−0.440745656370656)×(t_SiO2[λ]−0.154983108108108))+(−1100.04408119143)×((t_LT[λ]−0.168858590733587)×(t_SiO2[λ]−0.154983108108108))+74.9944030678128×((t_TiO2[λ]−0.0300916988416992)×(t_SiO2[λ]−0.154983108108108))+117.812778429437×((t_SiO2[λ]−0.154983108108108)×(t_SiO2[λ]−0.154983108108108)−0.00117057162586093). Equation 15

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20:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (110);
in the silicon substrate of which the plane orientation is (110), a directional vector obtained by projecting the ZP-axis onto a (110) plane of the silicon substrate is k110, and an angle between the directional vector k110 and a [001] direction of silicon that is a component of the silicon substrate is an angle of α110;
and
where the angle α110 is Si_psi[deg.], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 16 is less than or equal to about −80:
y[deg.]=(−77.5229944626225)+(−0.0245637365901893)×(Si_psi[deg.]−34.5205479452055)+(−1.18326432300356)×(t_Si2[λ]−0.408904109589041)+131.275052857081×(t_TiO2[λ]−0.0160045662100456)+(−18.9167659640434)×(t_SiO2[λ]−0.150228310502283)+0.00233031321934999×((Si_psi[deg.]−34.5205479452055)×(Si_psi[deg.]−34.5205479452055)−75.9116782385689)+(−0.0809397438263331)×((Si_psi[deg.]−34.5205479452055)×(t_Si2[λ]−0.408904109589041))+43.1653284334043×((t_Si2[λ]−0.408904109589041)×(t_Si2[λ]−0.408904109589041)−0.0169869268780884)+(−0.255179621676294)×((Si_psi[deg.]−34.5205479452055)×(t_TiO2[λ])−0.0160045662100456))+(−101.438420329361)×((t_Si2[λ]−0.408904109589041)×(t_TiO2[λ]−0.0160045662100456))+(−834.553397134957)×((t_TiO2[λ]−0.0160045662100456)×(t_TiO2[λ]−0.0160045662100456)−0.000126844728008173)+0.935627393438751×((Si_psi[deg.]−34.5205479452055)×(t_SiO2[λ])−0.150228310502283))+(−21.1152350576513)×((t_Si2[λ]−0.408904109589041)×(t_SiO2[λ]−0.150228310502283))+(−41.8110780477077)×((t_TiO2[λ]−0.0160045662100456)×(t_SiO2[λ]−0.150228310502283))+263.939639423742×((t_SiO2[λ]−0.150228310502283)×(t_SiO2[λ]−0.150228310502283)−0.00160953691541044). Equation 16

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21:

The acoustic wave device according to claim 4, wherein
the piezoelectric layer is a lithium tantalate layer;
the piezoelectric layer has crystallographic axes (XP, YP, ZP);
the plane orientation of the silicon substrate is (111);
in the silicon substrate of which the plane orientation is (111), a directional vector obtained by projecting the ZP-axis onto a (111) plane of the silicon substrate is k111, and an angle between the directional vector k111 and a [11-2] direction of silicon that is a component of the silicon substrate is an angle of α111;
and
where the angle α111 is Si_psi[deg.], a thickness of the piezoelectric layer is t_LT[λ], a thickness of the titanium oxide layer is t_TiO2[λ], a thickness of the silicon oxide layer is t_SiO2[λ], and a thickness of the polysilicon layer is t_Si2[λ], the Si_psi[deg.], the t_LT[λ], the t_TiO2[λ], the t_SiO2[λ], and the t_Si2[λ] each are a value within a range with which y in equation 17 is less than or equal to about −80:
y[deg.]=(−78.9096176038851)+0.034903516437231×(Si_psi[deg.]−45.8453473132372)+(−2.02533584474356)×(t_Si2[λ]−0.421068152031454)+81.4363661536651×(t_LT[λ]−0.156225425950199)+71.7903756668229×(t_TiO2[λ]−0.0334862385321101)+(−3.53261283561548)×(t_SiO2[λ]−0.149606815203146)+0.00246176329064131×((Si_psi[deg.]−45.8453473132372)×(Si_psi[deg.]−45.8453473132372)−143.191023568758)+(−0.0293712406566626)×((Si_psi[deg.]−45.8453473132372)×(t_Si2[λ]−0.421068152031454))+0.972512275661977×((t_Si2[λ]−0.421068152031454)×(t_Si2[λ]−0.421068152031454)−0.0430997109516307)+0.30260322985253×((Si_psi[deg.]−45.8453473132372)×(t_LT[λ]−0.156225425950199))+(−23.2249863870645)×((t_Si2[λ]−0.421068152031454)×(t_LT[λ]−0.156225425950199))+0.513496313876766×((Si_psi[deg.]−45.8453473132372)×(t_TiO2[λ]−0.0334862385321101))+(−143.065209527507)×((t_Si2[λ]−0.421068152031454)×(t_TiO2[λ]−0.0334862385321101))+(−324.329178613173)×((t_LT[λ]−0.156225425950199)×(t_TiO2[λ]−0.0334862385321101))+(−98.4001544132927)×((t_TiO2[λ]−0.0334862385321101)×(t_TiO2[λ]−0.0334862385321101)−0.000480867110753061)+(−1.15889670547368)×((Si_psi[deg.]−45.8453473132372)×(t_SiO2[λ]−0.149606815203146))+(−50.3263112114924)×((t_Si2[λ]−0.421068152031454)×(t_SiO2[λ]−0.149606815203146))+(−209.199256641353)×((t_LT[λ]−0.156225425950199)×(t_SiO2[λ]−0.149606815203146))+90.23187502294813×((t_TiO2[λ]−0.0334862385321101)×(t_SiO2[λ]−0.149606815203146))+347.448658314796×((t_SiO2[λ]−0.149606815203146)×(t_SiO2[λ]−0.149606815203146)−0.00114008131659363) Equation 17

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Acoustic wave device

Life of this patent

Abstract

Claims22

Acoustic wave device

Life of this patent

Abstract

Claims22