US 2023/0324801 A1Published application

Underlayer film forming composition for lithography, underlayer film, and pattern formation method

AssigneeMitsubishi Gas Chemical Company, Inc.

InventorsHiroaki YAMAMOTO, Atsuko IWASAKI, Takashi MAKINOSHIMA, Masatoshi ECHIGO

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Abstract

An object of the present invention is to provide a resist underlayer film forming composition for lithography that has features of having excellent smoothing performance on an uneven substrate, good embedding performance into a fine hole pattern, and a smoothed wafer surface after film formation, and the like. The object can be achieved by an underlayer film forming composition for lithography containing a compound having a protecting group.

Claims26

Dependent claims

An underlayer film forming composition for lithography comprising a compound having a protecting group.

Dependencies are inferred from the claim text.

Facts

Application: 18/021,160Filed 3 Aug 2021
Priority: JP 2020-13709514 Aug 2020
Published: 12 Oct 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

G03F 7/11
Characterised by structural details, e.g. supports, auxiliary layers: having cover layers or intermediate layers, e.g. subbing layers
C08G 8/10
Of formaldehyde, e.g. of formaldehyde formed in situ: with phenol
C08G 8/28
Condensation polymers of aldehydes or ketones with phenols only: chemically modified polycondensates
C08G 8/32
Chemically modified polycondensates: by organic acids or derivatives thereof, e.g. fatty oils

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