Back to results
US 2023/0323562 A1Published application
Ferroelectric thin film and forming method thereof
AssigneesSeoul National University R&Db Foundation, Institute for Basic Science
InventorsJungwon PARK, Kunwoo PARK
Life of this patent
Estimating the term…
Abstract
A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.
Claims10
A method of forming a ferroelectric thin film comprising:
- forming a sacrificial seed layer on a first substrate;
- forming a ferroelectric thin film on the sacrificial seed layer;
- and
- transferring the ferroelectric thin film to a second substrate.
1 more element
Dependencies are inferred from the claim text.