Wafer manufacturing method
AssigneeDisco Corporation
InventorsKazuya HIRATA, Satoshi GENDA, Asahi NOMOTO
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Abstract
A wafer manufacturing method includes a peeling start point forming step of applying, to an ingot, a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be manufactured, from an end face of the ingot, to form a peeling start point, and a peeling step of peeling off, from the peeling start point, the wafer to be manufactured from the ingot. In the peeling step, degassed water is supplied to the end face of the ingot to generate a degassed water layer, and an ultrasonic wave is applied to break the peeling start point.
Claims5
A wafer manufacturing method for manufacturing a wafer from an ingot, comprising:
- a peeling start point forming step of applying, to the ingot, a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be manufactured, from an end face of the ingot, to form a modified layer, thereby forming a peeling start point;
- and
- a peeling step of peeling off, from the peeling start point, the wafer to be manufactured from the ingot,
- wherein, in the peeling step, degassed water is supplied to the end face of the ingot to generate a degassed water layer, and an ultrasonic wave is applied to break the peeling start point.
Dependencies are inferred from the claim text.