Piezoelectric mems device with a suspended membrane having high mechanical shock resistance and manufacturing process thereof
AssigneeSTMicroelectronics S.r.l.
InventorsDomenico GIUSTI, Carlo Luigi PRELINI
Life of this patent
Estimating the term…
Abstract
A MEMS device having a body with a first and a second surface, a first portion and a second portion. The MEMS device further has a cavity extending in the body from the second surface; a deformable portion between the first surface and the cavity; and a piezoelectric actuator arranged on the first surface, on the deformable portion. The deformable portion has a first region with a first thickness and a second region with a second thickness greater than the first thickness. The second region is adjacent to the first region and to the first portion of the body.
Claims20
A method, comprising:
- forming a piezoelectric actuator on a first surface of a body of semiconductor material further having a second surface, a first portion, and a second portion;
- and
- removing selective portions of the body from the second surface of the body to form a cavity extending in the body, and to form a deformable portion at the first portion of the body, the deformable portion including a first region having a first thickness in a thickness direction and a second region having a second thickness, greater than the first thickness, in the thickness direction, the second region being adjacent to the first region of the deformable portion and being adjacent to the first portion of the body.
A method, comprising:
- forming a protective layer on a first surface of a substrate;
- forming a side recess and forming a projecting portion at the surface of the substrate surrounded by the side recess by removing selective portions of the substrate and the protective layer;
- forming an etch stop layer including a portion of the protective layer by forming an etch stop material along a sidewall of the projecting portion and in the side recess;
- forming an epitaxial layer on the etch stop layer, in the side recess, and overlapping the projecting portion;
- removing a portion of the epitaxial layer exposing a portion of the etch stop layer on the projecting portion;
- forming a plurality of layers on a portion of the epitaxial layer in the side recess and on the surface of the projecting portion;
- forming a piezoelectric actuator on the plurality of layers;
- and
- forming a cavity extending into a second surface of the substrate opposite to the first surface of the substrate and extending to the plurality of layers.
A method, comprising:
- forming a protective layer on a first surface of a substrate;
- exposing a region of the first surface of the substrate by forming an opening through the protective layer;
- forming an epitaxial layer on the region of the first surface of the substrate, in the opening, and on the protective layer;
- forming a plurality of layers on a surface of the epitaxial layer;
- forming a piezoelectric actuator on the plurality of layers;
- and
- forming a cavity extending into a second surface of the substrate opposite to the first surface of the substrate and extending to the plurality of layers.
Dependencies are inferred from the claim text.