Semiconductor layer structure with a thin blocking layer
AssigneeLumentum Operations LLC
InventorsTing LIU, Xing LI, Hery DJIE
Life of this patent
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Abstract
A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.
Claims20
A method, comprising:
- forming a blocking layer over a substrate;
- forming a buffer layer over the blocking layer;
- forming one or more epitaxial layers over the buffer layer,
- wherein the one or more epitaxial layers include a quantum-well layer;
- and
- forming a quantum-well intermixing region, after forming the blocking layer, the buffer layer, and the epitaxial layers, by subjecting the quantum-well layer to a high temperature treatment of at least 500 degrees Celsius,
- wherein the blocking layer suppresses defects from the substrate propagating to the quantum-well intermixing region during the high temperature treatment.
A method of manufacturing one or more laser devices, comprising:
- forming a blocking layer over a substrate;
- forming a buffer layer over the blocking layer;
- forming one or more epitaxial layers over the buffer layer,
- wherein the one or more epitaxial layers include a quantum-well layer;
- forming a quantum-well intermixing region, after forming the blocking layer, the buffer layer, and the epitaxial layers, by subjecting the quantum-well layer to a high temperature treatment of at least 500 degrees Celsius,
- wherein the blocking layer suppresses defects from the substrate propagating to the quantum-well intermixing region during the high temperature treatment;
- and
- forming the one or more laser devices after forming the quantum-well intermixing region.
Dependencies are inferred from the claim text.