Back to results
US 2023/0305359 A1Published application
Doped amorphous silicon carbide
AssigneeLawrence Livermore National Security, LLC
InventorsBrandon Demory, Tiziana C. Bond, Clint Frye, Lars Voss
Life of this patent
Estimating the term…
Abstract
Amorphous silicon carbide may be doped with one or more ions such as vanadium and these ions may radiate light if excited, for example, using optical or electrical pumping. A single photon light source may be formed from a single such ion that is pumped or from a plurality of ions that are pumped if light from only one ion is collected, e.g., using an aperture or pin hole. Such single photon sources may possibly be use in quantum computing, quantum sensing and/or quantum telecommunications.
Claims20
A light source comprising:
- a light emitter comprising amorphous silicon carbide having an ion therein;
- and
- a pump configured to direct energy to said amorphous silicon carbide to excite said ion into a higher energy state such that said ion emits light.
A device comprising:
- a host comprising amorphous silicon carbide;
- and
- a vanadium ion in said host of amorphous silicon carbide.
Dependencies are inferred from the claim text.