Sensing element and related methods

A method for forming a sensing element comprising:

• providing a silicon on insulator wafer bottom, a silicon on insulator wafer cap, microelectromechanical systems, through silicon vias (TSVs) and metal;
• forming microelectromechanical systems on the silicon on insulator wafer bottom;
• forming through silicon vias (TSVs) on the silicon on insulator wafer cap and bonding the silicon on insulator wafer cap to the silicon on insulator wafer bottom;
• removing silicon from the silicon on insulator wafer cap to expose the through silicon vias (TSVs);
• and
• adding metal to the through silicon vias (TSVs) to form terminals to create a completed sensing element.

A harsh environment torque sensor comprising:

• a first acoustic sensing resonator formed from a silicon substrate and having a first microelectromechanical system;
• a second acoustic sensing resonator formed from the silicon substrate and having a second microelectromechanical system, the second acoustic sensing resonator being arranged on the silicon substrate at a ninety degree (90°) angle with respect to the first acoustic sensing resonator so that one of the first acoustic sensing resonator and second acoustic sensing resonator senses compressive forces and the other of the first acoustic sensing resonator and second acoustic sensing resonator senses tensile strain and together the first acoustic sensing resonator and second acoustic sensing resonator form a torque sensor;
• and
• a high temperature bonding surface connected to the torque sensor for directly connecting the torque sensor to a metal object via a high temperature connecting processes comprising at least one of soldering, metalizing and/or brazing to form a harsh environment torque sensor that can withstand prolonged exposure to temperatures of up to three hundred degree Celsius (300° C.).