Method for planarizing cis-based thin film, cis-based thin film manufactured using the same, and solar cell comprising cis-based thin film
AssigneeKorea Institute of Science and Technology
InventorsDoh Kwon LEE, Seung Tae KIM, Byoung Soo YU, Yoon Hee JANG, Jeung Hyun JEONG
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Abstract
The present invention relates to a method for planarizing a CIS-based thin film, the method including: electropolishing a CIS-based compound layer by applying current or voltage to an electrochemical cell including: a CIS-based compound layer provided on a conductive base material, as a working electrode; a counter electrode; and an electrolyte solution including a precursor of elements constituting the CIS-based compound layer, a supporting electrolyte, a complexing agent, and an additive including a hydroxy functional group.
Claims11
A method for planarizing a CIS-based thin film, the method comprising:
- electropolishing a CIS-based compound layer by applying current or voltage to an electrochemical cell comprising:
- a CIS-based compound layer provided on a conductive base material, as a working electrode;
- a counter electrode;
- and an electrolyte solution comprising a precursor of elements constituting the CIS-based compound layer, a supporting electrolyte, a complexing agent, and an additive comprising a hydroxy functional group.
Dependencies are inferred from the claim text.