Semiconductor field-effect transistor, power amplifier comprising the same and manufacturing method thereof
AssigneeUltraband Technologies, Inc.
InventorChan-Shin Wu
Life of this patent
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Abstract
A semiconductor field-effect transistor, a power amplifier comprising the same and a manufacturing method thereof are provided herein. The semiconductor field-effect transistor contains an n-type doped layer arranged close to the edge of the two-dimensional electron gas area in a channel layer; said n-type doped layer is arranged to adjust the distribution of electron concentration in the transistor, and to improve the RF linearity of the overall component; thereby not only the threshold voltage can be controlled through the adjustment of the charge, but the contact and series resistance can also be reduced.
Claims13
A semiconductor field-effect transistor comprising:
- a channel layer;
- a barrier layer disposed on the channel layer;
- a gate disposed on the barrier layer;
- and
- a source and a drain disposed near two ends of the gate, respectively;
- wherein the channel layer and the barrier layer comprises different materials, and the channel layer is provided with a two-dimensional electron gas area near the barrier layer;
- wherein the channel layer further comprises an n-type doped layer disposed at a boundary of the two-dimensional electron gas area.
A method of manufacturing a semiconductor field-effect transistor comprising:
- forming a buffer layer on a substrate;
- forming a channel layer on the buffer layer and forming an n-type doped layer in the channel layer;
- forming a barrier layer on the channel layer;
- and
- forming a gate on the barrier layer, and forming a source and a drain near two ends of the gate electrode, respectively.
Dependencies are inferred from the claim text.