Micro-electromechanical system (mems) based inertial sensor and method of fabrication thereof

Abstract

A system for fabricating a crystalline film is provided comprising a sputtering chamber that receives placement of a substrate, receives placement of a Tungsten target, and receives configuration of a separation distance between the substrate and the Tungsten target. The system also receives adjustment of chamber pressure, receives selection of a gas mixture ratio, and receives selection of a sputtering power profile. The chamber yields crystalline cluster-free amorphous Tungsten nitride alloy film. The chamber receives placement of the Tungsten target on a sputtering tool. The separation distance is configured to minimize adatom mobility of film produced. The chamber pressure is adjusted within a range of about 30 mTorr to about 5 mTorr, inclusive. The gas mixture ratio is a sputtering gas mixture ratio of Argon to Nitrogen. The sputtering power profile is for the sputtering tool. The power profile is 300 W of alternating current.

Dependencies are inferred from the claim text.