Semiconductor laser device and method of manufacturing the same
AssigneeUshio Denki Kabushiki Kaisha
InventorsShintaro Miyamoto, Seiji Kitamura
Life of this patent
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Abstract
A semiconductor laser device includes a laser resonator including a layered structure in which a lower cladding layer, an active layer, and an upper cladding layer are formed over a semiconductor substrate, and a ridge that is formed on the upper cladding layer. The laser resonator emits laser light having a beam profile. When viewed in plan from a direction orthogonal to the semiconductor substrate, the laser resonator has an emission area on its emission end face. When the emission end face of the laser resonator is viewed in front, a virtual line defined by the intensity being 1/e2 of the peak intensity of the beam profile of the laser light fits inside the upper cladding layer in the emission area.
Claims16
A semiconductor laser device is an edge-emitting semiconductor laser device, the semiconductor laser device comprising:
- a laser resonator including a layered structure in which a lower cladding layer, an active layer, and an upper cladding layer are formed over a semiconductor substrate, and a ridge that is formed on the upper cladding layer, the laser resonator emitting laser light having a beam profile,
- wherein when viewed in plan from a direction orthogonal to the semiconductor substrate, the laser resonator includes an emission area on its emission end face,
- wherein when the emission end face of the laser resonator is viewed in front, a virtual line defined by an intensity being 1/e2 of a peak intensity of the beam profile of the laser light fits inside the upper cladding layer in the emission area.
A semiconductor laser device is an edge-emitting semiconductor laser device, the semiconductor laser device comprising:
- a laser resonator including a layered structure in which a lower cladding layer, an active layer, and an upper cladding layer are formed over a semiconductor substrate;
- and
- a ridge that is formed on the upper cladding layer,
- wherein when viewed in plan from a direction orthogonal to the semiconductor substrate, the laser resonator includes an emission area on its emission end face and a gain area adjacent to the emission area,
- a width of the ridge widens stepwise at a boundary between the gain area and the emission area, and
- a width of the ridge in the emission area is three times or more as large as a maximum width of the ridge in the gain area.
A method of manufacturing an edge-emitting semiconductor laser device, the method comprising:
- forming a layered structure including a lower cladding layer, an active layer, and an upper cladding layer over a semiconductor substrate;
- undergoing ridge processing in the upper cladding layer in a manner that, when an emission end face of the semiconductor laser device is viewed in front, a virtual line defined by an intensity being 1/e2 of a peak intensity of a beam profile of laser light fits inside the upper cladding layer in an emission area of a laser resonator;
- and
- forming an insulating layer covering at least a side face of a ridge that has been formed on the upper cladding layer by the ridge processing.
Dependencies are inferred from the claim text.