# US 2023/0274884 A1 · Multilayer ceramic electronic component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0274884 A1 - Document ID: US20230274884A1 - Status: Published application - Kind: A1 - Application number: 18/093,963 - Filed: 2023-01-06 - Published: 2023-08-31 - Earliest claimed: 2022-02-25 - Assignees: Samsung Electro-Mechanics Co., Ltd. - Applicants: Samsung Electro-Mechanics Co., Ltd. - Inventors: Eun Yong Jang; Seung Yeon Lee; Eun Chae Park; Byung Chul Jang - Web page: https://patentgrep.com/patent/US20230274884A1 ## CPC - H01G 4/008: Selection of materials - H01G 4/0085: {Fried electrodes} - H01G 4/012: Form of non-self-supporting electrodes - H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)} - H01G 4/232: electrically connecting two or more layers of a stacked or rolled capacitor - H01G 4/248: the terminals embracing or surrounding the capacitive element, e.g. caps (H01G4/252 takes precedence) - H01G 4/30: Stacked capacitors (H01G4/33 takes precedence) - H01G 4/1227: {based on alkaline earth titanates} - H01G 4/2325: {characterised by the material of the terminals} - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) ## Abstract A multilayer ceramic electronic component includes a body including a dielectric layer and a plurality of internal electrodes stacked with the dielectric layer interposed therebetween, the plurality of internal electrodes including indium (In) and tin (Sn), and an external electrode disposed on an outside of the body. An average content of indium (In) included in the internal electrode is higher than an average content of tin (Sn) included in the internal electrode. ## Claims ### Claim 1 A multilayer ceramic electronic component comprising: a body including a dielectric layer and internal electrodes stacked with the dielectric layer interposed therebetween, the internal electrodes including indium (In) and tin (Sn); and an external electrode disposed on an outside of the body, wherein an average content of indium (In) included in at least one of the internal electrodes is higher than an average content of tin (Sn) included in the at least one of the internal electrodes. ### Claim 2 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein a content of indium (In) in a region of at least one of the internal electrodes within 2 nm of an interface with the dielectric layer in a thickness direction thereof is 0.6 at % to 1 at %. ### Claim 3 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein a content of tin (Sn) in a region of at least one of the internal electrodes within 2 nm of an interface with the dielectric layer in a thickness direction thereof is 0.4 at % to 0.6 at %. ### Claim 4 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein the dielectric layer includes indium (In) and tin (Sn). ### Claim 5 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein the at least one of the internal electrodes further includes a highest at % of nickel (Ni). ### Claim 6 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein at least one of the internal electrodes includes indium tin oxide (ITO). ### Claim 7 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein an average thickness of at least one of the internal electrodes is 0.4 μm or less. ### Claim 8 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein an average thickness of the dielectric layer is 0.4 μm or less. ### Claim 9 (depends on 1) The multilayer ceramic electronic component of claim 1, wherein the at least one of the internal electrodes further includes nickel (Ni). ### Claim 10 (depends on 9) The multilayer ceramic electronic component of claim 9, wherein an average content of nickel (Ni) included in the at least one of the internal electrodes is higher than the average content of indium (In) included in the at least one of the internal electrodes. ### Claim 11 (depends on 10) The multilayer ceramic electronic component of claim 10, wherein an average content of nickel (Ni) included in the at least one of the internal electrodes is higher than the average content of tin (Sn) included in the at least one of the internal electrodes. ### Claim 12 (depends on 9) The multilayer ceramic electronic component of claim 9, wherein the at least one of the internal electrodes includes indium tin oxide (ITO). ### Claim 13 A multilayer ceramic electronic component comprising: a body including a dielectric layer and internal electrodes stacked with the dielectric layer interposed therebetween, the internal electrodes including indium (In) and tin (Sn); and an external electrode disposed on an outside of the body, wherein a content of indium (In) in a first region of at least one of the internal electrodes is higher than an average content of indium (In) in a second region of the at least one of the internal electrodes, where the first region is within 2 nm of an interface with the dielectric layer in a thickness direction thereof, and the second region is a region other than the first region, and a content of tin (Sn) in the first region is higher than an average content of tin (Sn) in the second region. ### Claim 14 (depends on 13) The multilayer ceramic electronic component of claim 13, wherein a content of indium (In) in a third region of the dielectric layer is higher than an average content of indium (In) in a fourth region of the dielectric layer, where the third region is a region within 2 nm of the interface in the thickness direction, and the fourth region is a region other than the third region. ### Claim 15 (depends on 13) The multilayer ceramic electronic component of claim 13, wherein a content of tin (Sn) in a third region of the dielectric layer is higher than an average content of tin (Sn) in a fourth region of the dielectric layer, where the third region is a region within 2 nm of the interface in the thickness direction, and the fourth region is a region other than the third region. ### Claim 16 (depends on 13) The multilayer ceramic electronic component of claim 13, wherein a content of indium (In) in the first region is 0.6 at % to 1 at %. ### Claim 17 (depends on 13) The multilayer ceramic electronic component of claim 13, wherein a content of tin (Sn) in the first region is 0.4 at % to 0.6 at %.