# US 2023/0274784 A1 · Method of controlling a semiconductor memory including memory cells and a word line

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- Number: US 2023/0274784 A1
- Document ID: US20230274784A1
- Status: Published application
- Kind: A1
- Application number: 18/312,696
- Filed: 2023-05-05
- Published: 2023-08-31
- Earliest claimed: 2018-09-18
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Tsukasa TOKUTOMI; Masanobu SHIRAKAWA
- Web page: https://patentgrep.com/patent/US20230274784A1

## CPC

- G11C 16/34: Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G06F 11/1048: {using arrangements adapted for a specific error detection or correction feature}
- G06F 11/1068: {in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence)}
- G11C 7/1009: {Data masking during input/output}
- G11C 11/5628: {Programming or writing circuits; Data input circuits}
- G11C 11/5642: {Sensing or reading circuits; Data output circuits}
- G11C 16/08: Address circuits; Decoders; Word-line control circuits
- G11C 16/10: Programming or data input circuits
- G11C 16/26: Sensing or reading circuits; Data output circuits
- G11C 16/32: Timing circuits
- G11C 29/52: Protection of memory contents; Detection of errors in memory contents
- G11C 16/0483: {comprising cells having several storage transistors connected in series}
- G11C 2029/0411: {Online error correction}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)

## Abstract

According to one embodiment, a controller is configured to write four-bit data in each of memory cells, and read first data item from the memory cells through application of a first voltage to a word line. The controller is configured to read second data items by repeating a first operation of reading data including data of respective first bits of the memory cells through application of two voltages to the word line at different timings while changing the two voltages in each first operation from the two voltages in another first operation. The controller is configured to mask part of each of the second data items using the first data.

## Claims

### Claim 1

A memory system comprising:
a semiconductor memory including memory cells and a word line coupled to the memory cells, each of the memory cells being capable of storing four-bit data, and
a controller configured to:
read a first data item from the memory cells through application of a first voltage to the word line;
repeat a first operation to read first bit data in each of the memory cells, the first operation including applying a second voltage to the word line, the first operation including applying a third voltage to the word line after applying the second voltage, the third voltage having a magnitude different from that of the second voltage, the second voltage being changed within a first range every time the first operation is repeated, the third voltage being changed within a second range every time the first operation is repeated;
read a plurality of second data items by the repeating of the first operation; and
mask part of each of the second data items using the first data item.

### Claim 2 (depends on 1)

The system of claim 1, wherein:
the first voltage has a magnitude between a magnitude of the second voltage and a magnitude of the third voltage.

### Claim 3 (depends on 2)

The system of claim 2, wherein:
the controller is further configured to:
obtain a plurality of third data items through the masking with the first data item; and
determine a first read voltage within the first range and a second read voltage within the second range based on the third data items.

### Claim 4 (depends on 3)

The system of claim 3, wherein:
the controller is further configured to apply a first read voltage and a second read voltage to the word line to read data stored in the memory cells.

### Claim 5 (depends on 1)

The system claim 1, wherein:
the controller is further configured to determine the first range based on the word line.

### Claim 6 (depends on 5)

The system claim 5, wherein:
the controller is further configured to determine the second range based on the word line.

### Claim 7 (depends on 1)

The system of claim 1, wherein:
the controller is further configured to:
determine in which one of two states each of the memory cells is, based on the first voltage, to obtain the first data item; and
determine in which one of sixteen states each of the memory cells is to obtain one of the second data items.

### Claim 8 (depends on 7)

The system of claim 7, wherein:
the first data item includes a plurality of first bits,
each of the first bits is based on in which one of two states one of the memory cells is, based on the first voltage,
each of the memory cells is capable of storing data in a first digit bit, a second digit bit, a third digit bit, and a fourth digit bit,
each of the second data items includes a plurality of second bits, and
each of the second bits of one of the second data items includes a data stored in the first digit bit of one of the memory cells.

### Claim 9 (depends on 1)

The system of claim 1, wherein:
the controller is further configured to perform a logical operation on one of the second data items and the first data item to mask the one of the second data items.

### Claim 10 (depends on 1)

The system of claim 1, wherein:
the controller is further configured to:
obtain a plurality of third data items through the masking with the first data item;
determine a plurality of first counts of memory cells estimated to have threshold voltages respectively corresponding to a plurality of voltages within the first range based on the third data items; and
detect, from the first counts, one or two or more second counts that are local minimum within the first range.

### Claim 11 (depends on 10)

The system of claim 10, wherein
the controller is further configured to:
select, when the two or more second counts are detected, a third count from the two or more second counts that are nearest to a number of the memory cells×Y/16 (wherein Y is a natural number not larger than 16), and
use a voltage corresponding to the third count to determine whether a threshold voltage of one of the memory cells is higher than a Yth lowest boundary voltage of fifteen boundary voltages.

### Claim 12 (depends on 5)

The system of claim 5, wherein:
the controller is further configured to select the first voltage based on the first range.