# US 2023/0274174 A1 · Miniature ion traps for fast, high-fidelity and scalable quantum computations > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0274174 A1 - Document ID: US20230274174A1 - Status: Published application - Kind: A1 - Application number: 18/005,393 - Filed: 2021-07-14 - Published: 2023-08-31 - Earliest claimed: 2020-07-14 - Assignees: The Regents of the University of California; Lawrence Livermore National Security, LLC - Applicants: The Regents of the University of California; Lawrence Livermore National Security, LLC - Inventors: JUERGEN BIENER; HARTMUT HAEFFNER; CLEMENS MATTHIESEN; ELI MEGIDISH; JAMES SPENCER OAKDALE; XIAOXING XIA - Web page: https://patentgrep.com/patent/US20230274174A1 ## CPC - G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control - G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS ## Abstract A vertical ion trap include at least four RF electrodes on a substrate, the RF electrodes extending up from the substrate, a region between the electrodes forming the vertical ion trap, and at least two direct current electrodes adjacent the RF electrodes and the vertical ion trap. A horizontal ion traps includes a substrate, the substrate having a hole, at least one RF electrodes raised above the substrate and offset from each other across the hole, the RF electrodes, and at least one DC electrode corresponding to each RF electrode, the DC electrodes raised above the substrate. A method of forming an ion trap includes forming three-dimensional structures on a substrate in a curable polymer using two-photon polymerization direct laser writing, metalizing the three-dimensional structures to form RF electrodes, and forming direct current electrodes at least partially on the substrate. ## Claims ### Claim 1 A vertical ion trap, comprising: at least four RF electrodes on a substrate, the RF electrodes extending up from the substrate; a region between the electrodes forming the vertical ion trap; and at least two direct current (DC) electrodes adjacent the RF electrodes and the vertical ion trap. ### Claim 2 (depends on 1) The vertical ion trap as claimed in claim 1, wherein the at least four RF electrodes comprises an array of electrodes on the substrate, and each region between sets of four electrodes form ion traps. ### Claim 3 (depends on 1) The vertical ion trap as claimed in claim 1, wherein the DC electrodes surround each of the RF electrodes. ### Claim 4 (depends on 1) The vertical ion trap as claimed in claim 1, wherein the at least four RF electrodes have a vertical extent of 100 microns and a width of 10 microns. ### Claim 5 (depends on 1) The ion trap as claimed in claim 1, further comprising traces on the substrate for each of the RF and DC electrodes, electrically isolated from each other electrode. ### Claim 6 A horizontal ion trap, comprising: a substrate, the substrate having a hole; at least one RF electrode raised above the substrate and offset from any other RF electrodes across the hole; and at least one direct current (DC) electrode corresponding to each RF electrode, the DC electrodes raised above the substrate. ### Claim 7 (depends on 6) The horizontal ion trap as claimed in claim 6, wherein the at least one RF electrode comprises at least two RF electrodes, wherein the two RF electrodes and their corresponding DC electrodes are offset vertically from each other. ### Claim 8 (depends on 7) The horizontal ion trap as claimed in claim 7, wherein a first RF electrode and corresponding DC electrode stack vertically from each other, and a second RF electrode and corresponding DC electrode stack vertically from each other but opposite from the first RF electrode and corresponding DC electrode. ### Claim 9 (depends on 6) The horizontal ion trap as claimed in claim 6, wherein the at least one RF electrode and the at least one DC electrode are raised off the substrate by bars printed directly on the substrate. ### Claim 10 (depends on 9) The horizontal ion trap as claimed in claim 9, further comprising electrical connections on the substrate connected to the bars. ### Claim 11 (depends on 6) The horizontal ion trap as claimed in claim 6, wherein the at least one RF electrode comprises a circular RF electrode suspended above the substrate and the at least one DC electrode comprises DC electrode segments offset from the RF electrodes, the RF electrodes and the DC electrode segments forming the ion trap. ### Claim 12 (depends on 11) The horizontal ion trap as claimed in claim 11, further comprising several RF electrodes connected to neighboring ion traps. ### Claim 13 A method of forming an ion trap, comprising: forming three-dimensional structures on a substrate in a curable polymer using two-photon polymerization direct laser writing; metalizing the three-dimensional structures to form RF electrodes; and forming direct current (DC) electrodes at least partially on the substrate. ### Claim 14 (depends on 13) The method as claimed in claim 13, wherein forming three-dimensional structures on a substrate comprises forming RF electrodes having a vertical extent from the substrate, creating a region between the electrodes that forms the ion trap. ### Claim 15 (depends on 13) The method as claimed in claim 13, wherein forming DC electrodes at least partially on the substrate comprises forming DC electrodes in-plane on the substrate surrounding the RF electrodes. ### Claim 16 (depends on 13) The method as claimed in claim 13, further comprising forming a hole in the substrate. ### Claim 17 (depends on 16) The method as claimed in claim 16, wherein forming three-dimensional structures comprises forming RF electrodes offset from each other across the hole. ### Claim 18 (depends on 17) The method as claimed in claim 17, wherein forming DC electrodes at least partially on the substrate comprises forming DC electrodes corresponding to the RF electrodes, each DC electrode offset vertically from the corresponding RF electrode.