# US 2023/0273637 A1 · Control Circuit Of Secondary Battery And Electronic Device

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- Number: US 2023/0273637 A1
- Document ID: US20230273637A1
- Status: Published application
- Kind: A1
- Application number: 18/024,198
- Filed: 2021-08-25
- Published: 2023-08-31
- Earliest claimed: 2020-09-07
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Yoshiyuki KUROKAWA; Kazuki TSUDA; Hiromichi GODO; Satoru OHSHITA; Takuro KANEMURA; Hidefumi RIKIMARU; Takayuki IKEDA; Yuto YAKUBO; Shunpei YAMAZAKI
- Web page: https://patentgrep.com/patent/US20230273637A1

## CPC

- G05F 3/24: wherein the transistors are of the field-effect type only (G05F3/205, G05F3/26, G05F3/30 take precedence)
- H01M 10/425: {Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing (printed circuits H05K1/00)}
- G01R 1/28: Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
- H01M 10/4264: {with capacitors}
- H01M 10/44: Methods for charging or discharging (circuits for charging H02J7/00)
- H02J 7/06: using discharge tubes or semiconductor devices
- Y02E 60/10: Energy storage using batteries
- G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- H01M: PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H02J: ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A control circuit of a secondary battery with a novel structure is provided. The control circuit of a secondary battery includes a first transistor, a first voltage generation circuit generating a first voltage, and a second voltage generation circuit generating a second voltage. The first voltage generation circuit includes a second transistor and a first capacitor. The second voltage generation circuit includes a third transistor and a second capacitor. The difference between the first voltage and the second voltage is set in accordance with the threshold voltage of the first transistor. When the first transistor includes a back gate, a voltage retention circuit having a function of retaining the voltage of the back gate is included. The voltage retention circuit includes a fourth transistor and a third capacitor. The third capacitor includes a ferroelectric layer between a pair of electrodes. The third capacitor retains a voltage applied to the back gate by being applied with a voltage for polarization inversion in the ferroelectric layer.

## Claims

### Claim 1

A control circuit of a secondary battery comprising:
a first transistor;
a first voltage generation circuit configured to generate a first voltage; and
a second voltage generation circuit configured to generate a second voltage,
wherein the first voltage generation circuit comprises a second transistor and a first capacitor,
wherein the second voltage generation circuit comprises a third transistor and a second capacitor, and
wherein a difference between the first voltage and the second voltage is set in accordance with a threshold voltage of the first transistor.

### Claim 2

A control circuit of a secondary battery comprising:
a first transistor;
a first voltage generation circuit configured to generate a first voltage;
a second voltage generation circuit configured to generate a second voltage; and
a voltage retention circuit,
wherein the first voltage generation circuit comprises a second transistor and a first capacitor,
wherein the second voltage generation circuit comprises a third transistor and a second capacitor,
wherein the first transistor comprises a back gate,
wherein the voltage retention circuit is configured to retain a voltage of the back gate, and
wherein a difference between the first voltage and the second voltage is set in accordance with a threshold voltage of the first transistor.

### Claim 3 (depends on 2)

The control circuit of a secondary battery according to claim 2,
wherein the voltage retention circuit comprises a fourth transistor and a third capacitor,
wherein the third capacitor comprises a ferroelectric layer between a pair of electrodes, and
wherein the third capacitor configured to retain a voltage applied to the back gate by being applied with a voltage for polarization inversion in the ferroelectric layer.

### Claim 4 (depends on 3)

The control circuit of a secondary battery according to claim 3,
wherein the ferroelectric layer comprises at least one of hafnium oxide and zirconium oxide.

### Claim 5 (depends on 1)

The control circuit of a secondary battery according to claim 1,
wherein channels of the first transistor to the third transistor comprise oxide semiconductors.

### Claim 6 (depends on 1)

The control circuit of a secondary battery according to claim 1,
wherein channels of the first transistor to the third transistor comprise silicon.

### Claim 7 (depends on 1)

An electric device comprising:
the control circuit of a secondary battery according to claim 1;
a secondary battery; and
a housing.

### Claim 8 (depends on 2)

The control circuit of a secondary battery according to claim 2,
wherein channels of the first transistor to the third transistor comprise oxide semiconductors.

### Claim 9 (depends on 2)

The control circuit of a secondary battery according to claim 2,
wherein channels of the first transistor to the third transistor comprise silicon.

### Claim 10 (depends on 2)

An electric device comprising:
the control circuit of a secondary battery according to claim 2;
a secondary battery; and
a housing.