# US 2023/0266901 A1 · Measurement of representative charge loss in a block to determine charge loss state > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0266901 A1 - Document ID: US20230266901A1 - Status: Published application - Kind: A1 - Application number: 17/675,624 - Filed: 2022-02-18 - Published: 2023-08-24 - Earliest claimed: 2022-02-18 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Patrick R. Khayat; Steven Michael Kientz; Sivagnanam Parthasarathy; Mustafa N. Kaynak; Vamsi Pavan Rayaprolu - Web page: https://patentgrep.com/patent/US20230266901A1 ## CPC - G06F 3/064: {Management of blocks} - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G06F 3/0625: {Power saving in storage systems} - G06F 3/0679: {Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]} - G11C 7/04: with means for avoiding disturbances due to temperature effects - G11C 16/10: Programming or data input circuits - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C 16/32: Timing circuits - G11C 16/3418: {Disturbance prevention or evaluation; Refreshing of disturbed memory data} - G11C 29/021: {in voltage or current generators} - G11C 29/028: {with adaption or trimming of parameters} - G11C 29/50004: {of threshold voltage} - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A processing device in a memory sub-system detects an occurrence of a triggering event, determines respective levels of charge loss associated with a first representative wordline of a block of a memory device and with a second representative wordline of the block of the memory device, and determines whether a difference between the respective levels of charge loss satisfies a threshold criterion. Responsive to determining that the difference between the respective levels of charge loss satisfies the threshold criterion, the processing device further determines that the block is in a uniform charge loss state. ## Claims ### Claim 1 A system comprising: a memory device; and a processing device, operatively coupled with the memory device, to perform operations comprising: detecting an occurrence of a triggering event; determining respective levels of charge loss associated with a first representative wordline of a block of the memory device and with a second representative wordline of the block of the memory device; determining whether a difference between the respective levels of charge loss satisfies a threshold criterion; and responsive to determining that the difference between the respective levels of charge loss satisfies the threshold criterion, determining that the block is in a uniform charge loss state. ### Claim 2 (depends on 1) The system of claim 1, wherein detecting the occurrence of the triggering event comprises detecting an expiration of a periodic interval. ### Claim 3 (depends on 1) The system of claim 1, wherein detecting the occurrence of the triggering event comprises detecting the occurrence of a power cycle event in the system. ### Claim 4 (depends on 1) The system of claim 1, wherein the first representative wordline comprises a first wordline of the block for which associated memory cells were written, and wherein the second representative wordline comprises a last wordline of the block for which associated memory cells were written. ### Claim 5 (depends on 1) The system of claim 1, wherein the difference between the respective levels of charge loss satisfies the threshold criterion when the difference between the respective levels of charge loss is less than a threshold amount. ### Claim 6 (depends on 1) The system of claim 1, wherein the processing device is to perform operations further comprising: receiving a request to perform a read operation on the block of the memory device; and responsive to determining that the block is in the uniform charge loss state, performing the read operation on the block using a uniform charge loss compensation technique. ### Claim 7 (depends on 1) The system of claim 1, wherein the processing device is to perform operations further comprising: responsive to determining that the difference between the respective levels of charge loss does not satisfy the threshold criterion, determining that the block is not in a uniform charge loss state. ### Claim 8 (depends on 7) The system of claim 7, wherein the processing device is to perform operations further comprising: receiving a request to perform a read operation on the block of the memory device; and responsive to determining that the block is not in the uniform charge loss state, performing the read operation on the block using a mixed SCL compensation technique. ### Claim 9 A method comprising: detecting an occurrence of a triggering event; determining respective levels of charge loss associated with a first representative wordline of a block of a memory device and with a second representative wordline of the block of the memory device; determining whether a difference between the respective levels of charge loss satisfies a threshold criterion; and responsive to determining that the difference between the respective levels of charge loss satisfies the threshold criterion, determining that the block is in a uniform charge loss state. ### Claim 10 (depends on 9) The method of claim 9, wherein detecting the occurrence of the triggering event comprises detecting an expiration of a periodic interval. ### Claim 11 (depends on 9) The method of claim 9, wherein detecting the occurrence of the triggering event comprises detecting the occurrence of a power cycle event in the system. ### Claim 12 (depends on 9) The method of claim 9, wherein the first representative wordline comprises a first wordline of the block for which associated memory cells were written, and wherein the second representative wordline comprises a last wordline of the block for which associated memory cells were written. ### Claim 13 (depends on 9) The method of claim 9, wherein the difference between the respective levels of charge loss satisfies the threshold criterion when the difference between the respective levels of charge loss is less than a threshold amount. ### Claim 14 (depends on 9) The method of claim 9, wherein the processing device is to perform operations further comprising: receiving a request to perform a read operation on the block of the memory device; and responsive to determining that the block is in the uniform charge loss state, performing the read operation on the block using a uniform charge loss compensation technique. ### Claim 15 (depends on 9) The method of claim 9, wherein the processing device is to perform operations further comprising: responsive to determining that the difference between the respective levels of charge loss does not satisfy the threshold criterion, determining that the block is not in a uniform charge loss state. ### Claim 16 (depends on 15) The method of claim 15, wherein the processing device is to perform operations further comprising: receiving a request to perform a read operation on the block of the memory device; and responsive to determining that the block is not in the uniform charge loss state, performing the read operation on the block using a mixed SCL compensation technique. ### Claim 17 A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising: receiving a request to perform a read operation on a block of a memory device; accessing an entry associated with the block in a data store, the entry comprising an indication of whether the block is in a uniform charge loss state, wherein the indication is based on whether a difference between respective levels of charge loss associated with a first representative wordline of a block of a memory device and with a second representative wordline of the block of the memory device satisfies a threshold criterion; and responsive to the entry indicating that the block is in a uniform charge loss state, performing the read operation on the block using a uniform charge loss compensation technique. ### Claim 18 (depends on 17) The non-transitory computer-readable storage medium of claim 17, wherein the first representative wordline comprises a first wordline of the block for which associated memory cells were written, and wherein the second representative wordline comprises a last wordline of the block for which associated memory cells were written. ### Claim 19 (depends on 17) The non-transitory computer-readable storage medium of claim 17, wherein the difference between the respective levels of charge loss satisfies the threshold criterion when the difference between the respective levels of charge loss is less than a threshold amount. ### Claim 20 (depends on 17) The non-transitory computer-readable storage medium of claim 17, wherein the instructions cause the processing device to perform operations further comprising: responsive to the entry indicating that the block is not in the uniform charge loss state, performing the read operation on the block using a mixed SCL compensation technique.