US 2023/0253201 A1 · CHALCOGEN PRECURSORS FOR DEPOSITION OF SILICON NITRIDE

Abstract

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Claims20

Dependent claims

A method of depositing a film, the method comprising:

exposing a substrate to a chalcogen precursor;
and
exposing the substrate to a reactant to form a silicon nitride (SixNy) film on the substrate, wherein the reactant comprises one or more of dimethylhydrazine (DMH), alkyl amine, hydrazine, alkyl hydrazine, allyl hydrazine, hydrogen (H2), ammonia (NH3), nitrous oxide (N2O), and plasmas thereof.

Dependencies are inferred from the claim text.

Facts

Application

18/134,802Filed 14 Apr 2023

Priority

18 Jan 2021

Published

10 Aug 2023

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10P 14/6682
The precursor containing a compound comprising Si: the compound being a silane, e.g. disilane, methylsilane or chlorosilane
C07F 7/0898
Compounds having one or more C—Si linkages: compounds with a Si-S linkage
C23C 16/345
Nitrides: silicon nitride
C23C 16/4408
Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber: by purging residual gases from the reaction chamber…

Chalcogen precursors for deposition of silicon nitride

Life of this patent

Chalcogen precursors for deposition of silicon nitride

Life of this patent

Abstract

Claims20