Use of a Composition Consisting of Ammonia and an Alkanol for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below
AssigneeBASF SE
InventorsChi Yueh KAO, Mei Chin SHEN, Daniel LOEFFLER, Andreas KLIPP, Haci Osman GUEVENC
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Abstract
Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C1 to C4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.
Claims20
A method of using a composition, the composition comprising:
- (a) 0.1 to 3% by weight ammonia;
- and
- (b) a C1 to C4 alkanol,
- the method comprising using the composition for anti-pattern collapse treatment of a substrate comprising patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or combination thereof.
A method for manufacturing integrated circuit devices, electronic data storage devices, optical devices, micromachines, and mechanical precision devices, the method comprising the steps of:
- (a) providing a substrate comprising patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof;
- (b) contacting the substrate with an aqueous pretreatment composition comprising 0.1 to 2% by weight HF;
- (c) removing the aqueous pretreatment composition from the substrate;
- (d) contacting the substrate with an APCC composition comprising:
- (i) 0.1 to 3% by weight ammonia;
- and
- (ii) a C1 to C4 alkanol;
- and
- (e) removing the APCC composition from the substrate.
Dependencies are inferred from the claim text.