Film structure for electric field guided photoresist patterning process

A device structure comprising;

• a substrate;
• and
• a multi-layer film structure disposed on a substrate comprising:
• an underlayer, the underlayer comprising an organic solvent and an acid agent;
• a photoresist layer comprising a photoacid generator disposed above the underlayer, the photoresist layer configured to move the photoacid generated from the photoacid generator substantially in a vertical direction when exposed to an electric field or a magnetic field forming a plurality of openings in the film structure having a line width roughness (LWR) between about 3 nm about 5 nm;
• and
• a photomask disposed above the photoresist layer, the photomask configured to expose a first portion of the photoresist layer unprotected by the photomask to a radiation light in a lithographic exposure process.