Bonded Assembly, And Ceramic Circuit Substrate And Semiconductor Device Using The Same
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsShota YAMAMOTO, Fumihiko YOSHIMURA, Seiichi SUENAGA, Tomoyuki OOZEKI
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Abstract
A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.
Claims14
A bonded assembly, comprising a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag, wherein
- in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.
Dependencies are inferred from the claim text.