Laser diode, optical integrated device, and manufacturing method thereof
AssigneeKyungpook National University Industry-Academic Cooperation Foundation
InventorsMuhan CHOI, Inbo KIM, Hongsik PARK
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Abstract
An optical integrated device may include a substrate, a first laser diode oscillating in a transverse magnetic mode (TM mode) on the substrate, and a second laser diode oscillating in a transverse electric mode (TE mode) on the substrate, wherein the first laser diode includes a first body in a shape of a disk, and through holes penetrating the first body.
Claims20
An optical integrated device comprising:
- a substrate;
- a first laser diode oscillating in a transverse magnetic mode (TM mode) on the substrate;
- and
- a second laser diode oscillating in a transverse electric mode (TE mode) on the substrate,
- wherein the first laser diode comprises:
- a first body in a shape of a disk;
- and
- through holes penetrating the first body.
A laser diode oscillating in TM mode, the laser diode comprising a body in a shape of a disk,
- wherein the body has a non-uniform curvature.
A method of manufacturing an optical integrated device, the method comprising:
- forming a first semiconductor layer, a second semiconductor layer, and a gain medium layer interposed between the first semiconductor layer and the second semiconductor layer on a substrate;
- forming a mask layer on the second semiconductor layer;
- patterning the mask layer to form first and second mask patterns;
- forming a first laser diode oscillating in a TM mode by patterning the second semiconductor layer, the gain layer, and the first semiconductor layer using the first mask pattern;
- and
- forming a second laser diode oscillating in a TE mode by patterning the second semiconductor layer, the gain layer, and the first semiconductor layer using the second mask pattern,
- wherein the forming of the first laser diode comprises forming through holes penetrating the second semiconductor layer, the gain layer, and the first semiconductor layer to control a refractive index of the patterned second semiconductor layer, the gain layer, and the first semiconductor layer.
Dependencies are inferred from the claim text.